SGA5386ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA5386Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high F
T
and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Features
Gain & Return Loss vs. Frequency
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Gain (dB)
15
GAIN
-10
-20
-30
-40
Return Loss (dB)
10
5
ORL
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
0
0
1
FO
Parameter
Small Signal Gain
R
Min.
15.2
Specification
Typ.
16.6
14.9
14.0
17.0
14.7
32.0
29.0
5000
N
2
3
Frequency (GHz)
EW
4
SiGe HBT
D
T
L
=+25ºC
5
IRL
ES
Max.
18.3
GaAs HBT
20
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
IG
Optimum Technology
Matching® Applied
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
18.5
dB
1950MHz
Output Return Loss
30.0
dB
1950MHz
Noise Figure
4.0
dB
1950MHz
Device Operating Voltage
3.1
3.6
4.1
V
Device Operating Current
54
60
66
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS20151204
O
T
Output Power at 1dB Compression
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
N
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
S
High Gain: 14.9dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Condition
1 of 7
SGA5386Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
120
5
+16
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
N
2 of 7
O
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
R
N
EW
Small Signal Gain
dB
17.6
17.2
16.6
14.7
Output Third Order Intercept Point
dBm
32.0
32.0
29.0
Output Power at 1dB Compression
dBm
17.0
17.0
14.7
Input Return Loss
dB
26.4
19.6
16.9
18.5
Output Return Loss
dB
27.3
29.5
31.0
30.0
Reverse Isolation
dB
20.6
20.8
21.1
21.2
Noise Figure
dB
3.4
3.5
4.0
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
IG
Parameter
Unit
100
MHz
500
MHz
850
MHz
N
1950
MHz
S
2400
MHz
14.0
27.0
13.6
15.8
33.4
21.2
4.1
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
3500
MHz
12.5
ES
D
11.6
19.1
19.8
SGA5386Z
OIP
3
vs. Frequency
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
40
35
OIP
3
(dBm)
P
1dB
(dBm)
20
18
16
14
12
P
1dB
vs. Frequency
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
30
25
T
L
=+25ºC
20
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
T
L
=+25ºC
0
0.5
1
1.5
2
Frequency (GHz)
S
10
2.5
3
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
7
6
5
4
3
2
0
Noise Figure (dB)
EW
0.5
1
N
O
T
FO
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
R
N
1.5
2
Frequency (GHz)
D
T
L
=+25ºC
2.5
3
ES
IG
Noise Figure vs. Frequency
N
3 of 7
SGA5386Z
|
S
21
|
vs. Frequency
20
15
S
21
(dB)
|
S
11
|
vs. Frequency
0
-10
S
11
(dB)
-20
-30
-40
5
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
10
5
0
0
1
2
3
Frequency (GHz)
4
|
S
12
|
vs. Frequency
-12
-15
-18
-21
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
-10
-20
-30
-40
-24
0
1
2
3
Frequency (GHz)
4
N
T
L
+25°C
-40°C
+85°C
EW
S
22
(dB)
S
12
(dB)
D
ES
IG
5
|
S
22
|
vs. Frequency
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
N
0
1
2
3
Frequency (GHz)
S
T
L
+25°C
-40°C
+85°C
T
L
4
+25°C
-40°C
+85°C
5
T
L
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
N
4 of 7
O
T
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
R
5
SGA5386Z
Application Schematic
Frequency (Mhz)
V
S
R
BIAS
1 uF
1000
pF
Reference
Designator
500
850
1950
2400
3500
C
B
C
D
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
L
C
Note: R
BIAS
provides DC bias stability over temperature.
Evaluation Board Layout
V
S
R
BIAS
EW
1 uF
1000 pF
N
R
L
C
C
D
N
O
T
FO
C
B
C
B
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
D
ES
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
IG
C
B
2
C
B
N
39
RF in
4
1
SGA5386Z
3
RF out
Supply Voltage(V
S
)
R
BIAS
S
6V
8V
75
Recommended Bias Resistor Values for I
D
=60mA
R
BIAS
=( V
S
-V
D
) / I
D
10 V
110
12 V
150
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