This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5C01
Silicon NPN epitaxial planar type
For low frequency amplification
DSC2C01 in SMini3 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini3-F2-B
Name
Pin
1. Base
2. Emitter
3. Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: C9
Unit
V
V
V
mA
mA
mW
°C
°C
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
100
100
15
20
50
150
150
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CE
= 60 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 10 V, I
C
= 2 mA
400
0.05
140
Min
100
100
15
0.1
1
1 200
0.20
Typ
Max
Unit
V
V
V
mA
mA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
Rank
h
FE
Marking Symbol
R
R
400 to 800
C9R
S
S
600 to 1 200
C9S
Publication date: January 2011
Ver. BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
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–
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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