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MT47H32M8FP-5

Description
DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60
Categorystorage    storage   
File Size5MB,99 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT47H32M8FP-5 Overview

DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60

MT47H32M8FP-5 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length12 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.007 A
Maximum slew rate0.2 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
PRELIMINARY
256Mb: x4, x8, x16
DDR2 SDRAM
DDR2 SDRAM
Features
V
DD
= +1.8V ±0.1V, V
DD
Q = +1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
Differential clock inputs (CK, CK#)
Commands entered on each rising CK edge
DQS edge-aligned with data for READs
DQS center-aligned with data for WRITEs
Duplicate output strobe (RDQS) option for x8
configuration
DLL to align DQ and DQS transitions with CK
Four internal banks for concurrent operation
Data mask (DM) for masking write data
Programmable CAS Latency (CL): 2, 3, 4, and 5
Posted CAS additive latency (AL): 0, 1, 2, 3, and 4
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths: 4 or 8
READ burst interrupt supported by another READ
WRITE burst interrupt supported by another WRITE
Adjustable data-output drive strength
Concurrent auto precharge option is supported
Auto Refresh (CBR) and Self Refresh Mode
64ms, 8,192-cycle refresh
Off-chip driver (OCD) impedance calibration
On-die termination (ODT)
Marking
64M4
32M8
16M16
FP
FG
-5
-5E
-37E
none
MT47H64M4 – 16 MEG x 4 x 4 BANKS
MT47H32M8 – 8 MEG x 8 x 4 BANKS
MT47H16M16 – 4 MEG x 16 x 4 BANKS
For the latest data sheet, please refer to the Micron Web
site:
http://www.micron.com/datasheets
ARCHITECTURE
Configuration
Refresh Count
Row Addressing
Bank
Addressing
Column
Addressing
64 MEG x 4
16 Meg x 4 x 4
banks
8K
8K (A0-A12)
4 (BA0, BA1)
2K (A0-A9, A11)
32 MEG x 8 16 MEG x 16
8 Meg x 8 x 4
banks
8K
8K (A0-A12)
4 (BA0, BA1)
1K (A0-A9)
4 Meg x 16 x 4
banks
8K
8K (A0-A12)
4 (BA0, BA1)
512 (A0-A8)
Options
• Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
32 Meg x 8 (8 Meg x 8 x 4 banks)
16 Meg x 16 (4 Meg x 16 x 4 banks)
• FBGA Package
60-ball (8mm x 12mm) FBGA (x4, x8)
84-ball (8mm x 14mm) FBGA (x16)
• Timing – Cycle Time
5.0ns @ CL = 4 (DDR2-400)
5.0ns @ CL = 3 (DDR2-400)
3.75ns @ CL = 4 (DDR2-533)
• Self Refresh
Standard
Table 1:
SPEED
GRADE
-5
-5E
-37E
Key Timing Parameters
DATA RATE
(MHz)
CL = 3
400
400
CL = 4
400
400
533
t
RCD
(ns)
20
15
15
RP
(ns)
20
15
15
t
RC
(ns)
65
60
60
t
09005aef80b12a05
256MbDDR2_1.fm - Rev. B 9/03 EN
1
©2003 Micron Technology, Inc.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

MT47H32M8FP-5 Related Products

MT47H32M8FP-5 MT47H16M16FG-37E MT47H32M8FP-5E MT47H32M8FP-37E MT47H64M4FP-37E MT47H16M16FG-5 MT47H64M4FP-5E
Description DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 DDR DRAM, 32MX8, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 DDR DRAM, 32MX8, 0.5ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60
Is it Rohs certified? conform to incompatible conform to conform to conform to incompatible conform to
Parts packaging code BGA BGA BGA BGA BGA BGA BGA
package instruction TFBGA, BGA60,9X11,32 TFBGA, BGA84,9X15,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 8 X 14 MM, FBGA-84 TFBGA, BGA60,9X11,32
Contacts 60 84 60 60 60 84 60
Reach Compliance Code compliant not_compliant unknown compliant compliant not_compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.6 ns 0.5 ns 0.6 ns 0.5 ns 0.5 ns 0.6 ns 0.6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 200 MHz 266 MHz 200 MHz 266 MHz 267 MHz 200 MHz 200 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 4,8 4,8 4,8 4,8 4,8 4,8 4,8
JESD-30 code R-PBGA-B60 R-PBGA-B84 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B84 R-PBGA-B60
JESD-609 code e1 e0 e1 e1 e1 e0 e1
length 12 mm 14 mm 12 mm 12 mm 12 mm 14 mm 12 mm
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bi
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 8 16 8 8 4 16 4
Number of functions 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1
Number of terminals 60 84 60 60 60 84 60
word count 33554432 words 16777216 words 33554432 words 33554432 words 67108864 words 16777216 words 67108864 words
character code 32000000 16000000 32000000 32000000 64000000 16000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
organize 32MX8 16MX16 32MX8 32MX8 64MX4 16MX16 64MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA60,9X11,32 BGA84,9X15,32 BGA60,9X11,32 BGA60,9X11,32 BGA60,9X11,32 BGA84,9X15,32 BGA60,9X11,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 235 260 260 260 235 260
power supply 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES YES YES
Continuous burst length 4,8 4,8 4,8 4,8 4,8 4,8 4,8
Maximum standby current 0.007 A 0.009 A 0.007 A 0.009 A 0.009 A 0.007 A 0.007 A
Maximum slew rate 0.2 mA 0.24 mA 0.23 mA 0.24 mA 0.24 mA 0.2 mA 0.23 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER OTHER
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30 30 30
width 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
Is it lead-free? Lead free Contains lead Lead free Lead free Lead free - Lead free
Maker Micron Technology - Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology

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