MT46V32M16P-5B:D datasheet, PDF

MT46V32M16P-5B:D: DescriptionDDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66; Categorystorage storage; File Size6MB，83 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT46V32M16P-5B:D Overview

DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
package instruction	TSSOP, TSSOP66,.46
Reach Compliance Code	compliant
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	1
Number of terminals	66
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	260
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.48 mA
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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