N-CHANNEL 30V - 0.015
Ω
- 36A D
2
PAK
LOW GATE CHARGE STripFET™II POWER MOSFET
PRELIMINARY DATA
STB36NF03L
TYPE
STB36NF03L
s
s
s
s
s
V
DSS
30 V
R
DS(on)
<0.02Ω
I
D
36 A
TYPICAL R
DS
(on) = 0.015
Ω
TYPICAL Q
g
= 18 nC @ 10V
OPTIMAL R
DS(on)
x Qg TRADE-OFF
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
3
1
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
D
2
PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
stg
T
j
February 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
± 18
36
25
144
75
0.5
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
1/7
(•)
Pulse width limited by safe operating area
STB36NF03L
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA
V
GS
= 0
Min.
30
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 18V
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
V
GS
= 5 V
I
D
= 250 µA
I
D
= 18 A
I
D
= 9 A
Min.
1
0.015
0.026
0.020
0.035
Typ.
Max.
Unit
V
Ω
Ω
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
>I
D(on)
xR
DS(on)max
I
D
=18 A
Min.
Typ.
20
750
270
60
Max.
Unit
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/7
STB36NF03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 18 A
V
DD
= 15 V
R
G
= 4.7
Ω
V
GS
= 4.5 V
(Resistive Load, Figure 3)
V
DD
=24 V I
D
=32 A V
GS
=10V
Min.
Typ.
16
200
18
3
5
21
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
I
D
= 18 A
V
DD
= 15 V
R
G
= 4.7Ω,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
35
40
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SDM (
•
)
V
SD (*)
t
rr
Q
rr
I
RRM
I
SD
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 36 A
V
GS
= 0
50
80
2
Test Conditions
Min.
Typ.
Max.
36
144
1.5
Unit
A
A
V
ns
nC
A
di/dt = 100A/µs
I
SD
= 36 A
V
DD
= 15 V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
3/7
STB36NF03L
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
Fig. 3:
Switching Times Test Circuits For Resistive
Load
Fig. 4:
Gate Charge test Circuit
Fig. 5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/7
STB36NF03L
D
2
PAK MECHANICAL DATA
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
0°
10
8.5
4.88
15
1.27
1.4
2.4
0.4
8°
0°
5.28
15.85
1.4
1.75
3.2
0.192
0.591
0.050
0.055
0.094
0.016
8°
mm.
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.21
8.95
8
10.4
0.394
0.334
0.208
0.624
0.055
0.069
0.126
TYP.
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
0.315
0.409
inch.
TYP.
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
5/7
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