MURS140 and MURS160
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
400 to 600V
Forward Current
1.0A
Reverse Recovery Time
50ns
Ultrafast Plastic Rectifier
DO-214AA (SMB)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.180 (4.57)
0.160 (4.06)
0.106 MAX
(2.69 MAX)
0.012 (0.305)
0.006 (0.152)
0.083 MIN
(2.10 MIN)
0.050 MIN
(1.27 MIN)
0.096 (2.44)
0.084 (2.13)
Dimensions in inches
and (millimeters)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008
(0.203)
Max.
0.220 REF
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
• Ultrafast recovery time for high efficiency
• For surface mount applications • Glass passivated junction
• High temperature soldering guaranteed:
250°C/10 seconds on terminals
Parameter
Device Marking Codes
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 150°C
See figure 1
T
L
= 125°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Typical thermal resistance junction to ambient
Operating junction and storage temperature range
Mechanical Data
Case:
JEDEC DO-214AA molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.003 oz., 0.093 g
Packaging Codes/Options:
5/3.2K per 13” reel (12mm tape)
2/750 EA per 7” reel (12mm tape)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
R
ΘJL
T
J
, T
STG
MURS140
MG
400
400
400
1.0
2.0
35
13
–65 to +175°C
MURS160
MJ
600
600
600
V
V
V
A
A
°C/W
°C
Unit
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Electrical Characteristics
Maximum instantaneous
forward voltage
(Note 1)
Maximum instantaneous reverse current
at rated DC blocking voltage
(Note 1)
Ratings at 25°C ambient temperature unless otherwise specified.
at I
F
= 1.0A, T
J
= 25°C
at I
F
= 1.0A, T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
V
F
I
R
t
rr
t
rr
t
fr
1.25
1.05
5.0
150
50
75
50
V
µA
ns
ns
ns
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Maximum reverse recovery time at,
I
F
= 1.0A, di/dt = 50A/µs, V
R
= 30V, I
rr
= 10% I
RM
Maximum forward recovery time at I
F
= 1.0A, di/dt = 100A/µs,
recovery to 1.0V
Notes:
(1) Pulse test: t
p
= 300µs, duty cycle
≤
2%
Document Number 88688
30-Jul-02
www.vishay.com
1
MURS140 and MURS160
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise specified)
Fig. 1 – Forward Current
Derating Curve
6.0
50
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
5.0
40
4.0
3.0
30
20
2.0
1.0
10
0
0
25
50
0
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Reverse Leakage Current
(µA)
80
100
Fig. 4 – Typical Reverse Leakage
Characteristics
T
J
= 175°C
10
Instantaneous Forward Current (A)
10
T
J
= 175°C
1
T
J
= 100
°
C
1
T
J
= 100°C
T
J
= 25°C
0.1
0.1
0.01
T
J
= 25°C
0
20
40
60
80
100
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
0.001
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
100
Junction Capacitance (pF)
T
J
= 25
°
C
f = 1.0 MHz
Vsig = 50m Vp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88688
30-Jul-02
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