RN1706(T5RMAA,F) datasheet, PDF

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RN1706(T5RMAA,F): DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size462KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1706(T5RMAA,F) Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

RN1706(T5RMAA,F) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknown
Other features	BUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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RN1701~RN1706

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1701, RN1702, RN1703

RN1704, RN1705, RN1706

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in USV (ultra super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2701 to RN2706

Equivalent Circuit and Bias Resistor Values

Type No.

RN1701

RN1702

RN1703

RN1704

RN1705

RN1706

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

USV

JEDEC

―

JEITA

―

TOSHIBA

2-2L1A

Weight: 6.2mg (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1701 to 1706

RN1701 to 1704

RN1705, 1706

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55

to150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Start of commercial production

1992-01

2014-03-01

RN1706(T5RMAA,F) Related Products

	RN1706(T5RMAA,F)	RN1704,LF	RN1704,LF(T	RN1702,LF	RN1701,LF	RN1705,LF	RN1705(T5LHLS,F)	RN1706,LF	RN1703,LF	RN1703(T5LHLS,F)
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Base Number Matches	-	1	1	1	1	1	1	1	-	-

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