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MSM56V16400-10TS-K

Description
Synchronous DRAM, 4MX4, 9ns, CMOS, PDSO44,
Categorystorage    storage   
File Size1MB,28 Pages
ManufacturerLAPIS Semiconductor Co., Ltd.
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MSM56V16400-10TS-K Overview

Synchronous DRAM, 4MX4, 9ns, CMOS, PDSO44,

MSM56V16400-10TS-K Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLAPIS Semiconductor Co., Ltd.
package instructionTSOP, TSOP44,.46,32
Reach Compliance Codeunknown
Maximum access time9 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G44
JESD-609 codee0
memory density16777216 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width4
Number of terminals44
word count4194304 words
character code4000000
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.14 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL

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