ShenZhen
HuaXinAn Electronics Co.,Lt
SIDACtor Protection Thyristors
Description
SXXX0EA SXXX0EB
SXXX0EC
Package TO-92
Fast Delivery Time
Sxxx0EA,SXXX0EB,SXXX0EC Series SIDACtor Protection Thyristor protect telecommunications
equipment such as ADSL Modems,Router, , Telephone, CCTV Camera,Digital Video Record,Video
Capture Card,Twisted-pair video transmitter,CATV Splitter.....Etc.
Sxxx0EA,SXXX0EB,SXXX0EC Series SIDACtor Protection Thyristor are used to enable equipment to
meet various regulatory requirements including GR 1089, ITU K.20/21,IEC 61000-4-5, YD/T 1082,YD/T
993,YD/T 950,TIA-968-A ,TIA-968-B
Features
Compared to surge suppression using other technologies, Sxxx0EA,SXXX0EB,SXXX0EC Series devices offer absolute surge
protection regardless of the surge current available and the rate of applied voltage (dv/dt).
Sxxx0EA,SXXX0EB,SXXX0EC Series devices:
•
100% Lead-Free(RoHs
Compliant )
•
Cannot be damaged by voltage
•
Eliminate hysteresis and heat dissipation typically found with clamping devices
•
Eliminate voltage overshoot caused by fast-rising transients
•
Are non-degenerative
•
Have low capacitance, making them ideal for high-speed transmission equipment
Electrical
Characteristics
Parameter
Definition
Peak Off-state Voltage
— maximum voltage that can be applied while maintaining off state
Switching Voltage
— maximum voltage prior to switching to on state
Holding Current
— minimum current required to maintain on state
Switching Current
— maximum current required to switch to on state
On-state Current
— maximum rated continuous on-state current
On-state Voltage
— maximum voltage measured at rated on-state current
Off-state Capacitance
— typical capacitance measured in off state
Leakage Current
— maximum peak off-state current measured at V
DRM
Peak Pulse Current
— maximum rated peak impulse current
Peak One-cycle Surge Current
— maximum rated one-cycle AC current
Rate of Rise of Current
— maximum rated value of the acceptable rate of rise in current over time
V
DRM
V
S
I
H
I
S
I
T
V
T
C
apacitance
I
DRM
I
PP
I
TSM
di/dt
1
Revised:February 25,2014
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