Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SIEMENS |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown |
Maximum collector current (IC) | 0.1 A |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 200 |
JESD-30 code | O-PBCY-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 0.35 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 200 MHz |
VCEsat-Max | 0.6 V |