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SK50GD12T4TP

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size268KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

SK50GD12T4TP Overview

Insulated Gate Bipolar Transistor,

SK50GD12T4TP Parametric

Parameter NameAttribute value
MakerSEMIKRON
package instruction,
Reach Compliance Codecompliant

SK50GD12T4TP Preview

SK 50 GD 12T4 Tp
Absolute Maximum Ratings
Symbol
IGBT 1
V
CES
I
C
I
C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
I
CRM
= 3 x I
Cnom
V
CC
= 800 V
V
GE
15 V
V
CES
1200 V
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
1200
67
50
75
60
50
150
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
V
A
A
A
A
A
A
V
µs
°C
Conditions
Values
Unit
SEMITOP 4 Press-Fit
IGBT module
SK 50 GD 12T4 Tp
Target Data
Features
• One screw mounting module
• Solder free mounting with Press-Fit
terminals
• Fully compatible with SEMITOP
®
Press-Fit types
• Improved thermal performances by
aluminium oxide substrate
• Trench4 IGBT technology
• CAL4F technology FWD
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
®
I
Cnom
I
CRM
V
GES
t
psc
T
j
Absolute Maximum Ratings
Symbol
Diode 1
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
I
FRM
= 3 x I
Fnom
10 ms, sin 180°, T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
1200
53
40
60
48
50
150
270
-40 ... 175
V
A
A
A
A
A
A
A
°C
Conditions
Values
Unit
Typical Applications*
• Inverter up to 26kVA
• Typical motor power 15kW
Absolute Maximum Ratings
Symbol
Module
I
t(RMS)
T
stg
V
isol
AC, sinusoidal, t = 1 min
T
terminal
= 100 °C, T
S
= 60°C
40
-40 ... 125
2500
A
°C
V
Conditions
Values
Unit
GD-T
© by SEMIKRON
Rev. 1 – 10.06.2014
1
SK 50 GD 12T4 Tp
Characteristics
Symbol
IGBT 1
V
CE(sat)
V
CE0
r
CE
Conditions
I
C
= 50 A
V
GE
= 15 V
chiplevel
chiplevel
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
-7V...+15V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 50 A
R
G on
= 32
Ω
R
G off
= 32
Ω
di/dt
on
= 920 A/µs
di/dt
off
= 920 A/µs
V
GE neg
= -7 V
V
GE pos
= 15 V
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.85
2.20
1.1
1.0
15
24
max.
2.10
2.40
1.3
1.2
16
24
6.5
0.13
Unit
V
V
V
V
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
SEMITOP
®
4 Press-Fit
IGBT module
SK 50 GD 12T4 Tp
Target Data
Features
• One screw mounting module
• Solder free mounting with Press-Fit
terminals
• Fully compatible with SEMITOP
®
Press-Fit types
• Improved thermal performances by
aluminium oxide substrate
• Trench4 IGBT technology
• CAL4F technology FWD
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
V
GE
= V
CE
V, I
C
= 1.7 mA
T
j
= 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
2.77
0.205
0.16
375
4
63
65
8.3
521
80
5
0.65
Characteristics
Symbol
Diode 1
V
F
= V
EC
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
Typical Applications*
• Inverter up to 26kVA
• Typical motor power 15kW
Conditions
I
F
= 50 A
V
GE
= 15 V
chiplevel
chiplevel
chiplevel
I
F
= 50 A
di/dt
off
= 920 A/µs
V
GE
= -7 V
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
2.22
2.18
1.3
0.9
18.4
25.6
30
7.2
2.15
0.97
max.
2.54
2.50
1.5
1.1
20.8
28
Unit
V
V
V
V
A
µC
mJ
K/W
Characteristics
Symbol
Module
M
s
w
to heatsink
weight
2.5
60
2.75
Nm
g
Conditions
min.
typ.
max.
Unit
Characteristics
Symbol
R
100
B
100/125
Conditions
T
r
= 100 °C,
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
min.
typ.
493 ± 5%
3550
±2%
max.
Unit
Ω
K
Temperature Sensor
GD-T
2
Rev. 1 – 10.06.2014
© by SEMIKRON
SK 50 GD 12T4 Tp
Fig. 1: Typ. IGBT 1 output characteristic, inclusive R
CC'+
EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
S
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. I
C
© by SEMIKRON
Rev. 1 – 10.06.2014
3
SK 50 GD 12T4 Tp
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
4
Rev. 1 – 10.06.2014
© by SEMIKRON
SK 50 GD 12T4 Tp
SEMITOP 4 Press-Fit
GD-T
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 10.06.2014
5

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