TAOS Inc.
is now
ams AG
The technical content of this TAOS datasheet is still valid.
Contact information:
Headquarters:
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Tobelbaderstrasse 30
8141 Unterpremstaetten, Austria
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TSL230RD, TSL230ARD, TSL230BRD
PROGRAMMABLE LIGHT-TO-FREQUENCY CONVERTERS
TAOS054P
−
OCTOBER 2007
D
High-Resolution Conversion of Light
D
D
D
D
D
D
D
D
Description
The TSL230RD, TSL230ARD, and TSL230BRD programmable light-to-frequency converters combine a
configurable silicon photodiode and a current-to-frequency converter on single monolithic CMOS integrated
circuit. The output can be either a pulse train or a square wave (50% duty cycle) with frequency directly
proportional to light intensity. Device sensitivity is selectable in three ranges, providing two decades of
adjustment. The full-scale output frequency can be scaled by one of four preset values. All inputs and the output
are TTL compatible, allowing direct two-way communication with a microcontroller for programming and output
interface. The output enable (OE) places the output in the high-impedance state for multiple-unit sharing of a
microcontroller input line.
The devices are available with absolute output frequency tolerances of
±10%
(TSL230BRD),
±15%
(TSL230ARD), and
±20%
(TSL230RD). They have been temperature compensated for the ultraviolet-to-visible
light range of 320 nm to 700 nm and respond over the light range of 320 nm to 1050 nm. The devices are
characterized over the temperature range of
−25°C
to 70°C.
Functional Block Diagram
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Output
Current-to-Frequency
Converter
OE
S1
S2
S3
Photodiode Array
S0
Intensity to Frequency With No External
Components
Programmable Sensitivity and Full-Scale
Output Frequency
Communicates Directly With a Microcontroller
High Irradiance Responsivity . . .
790 Hz/(mW/cm
2
) Typical at 640 nm
Single-Supply Operation . . . 2.7 V to 5.5 V
Power-Down Feature . . . 5
mA
Typical
Nonlinearity Error Typically 0.2% at 100 kHz
Stable 200 ppm/°C Temperature Coefficient
Low-Profile Lead (Pb) Free and RoHS
Compliant Surface-Mount Package
PACKAGE D
8-LEAD SOIC
(TOP VIEW)
S0 1
S1 2
OE 3
GND 4
8 S3
7 S2
6 OUT
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road
S
Suite 300
S
Plano, TX 75074
S
(972) 673-0759
r
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Copyright
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2007, TAOS Inc.
5 V
DD
TSL230RD, TSL230ARD, TSL230BRD
PROGRAMMABLE LIGHT-TO-FREQUENCY CONVERTERS
TAOS054P
−
OCTOBER 2007
Terminal Functions
TERMINAL
NAME
GND
OE
OUT
S0, S1
S2, S3
V
DD
NO.
4
3
6
1, 2
7, 8
5
I
O
I
I
TYPE
Ground
Enable for f
O
(active low)
Scaled-frequency (f
O
) output
Sensitivity-select inputs
Supply voltage
DESCRIPTION
Selectable Options
S1
L
L
H
H
S0
L
H
L
H
SENSITIVITY
Power down
1
×
10
×
S3
L
L
S2
L
L
H
H
f
O
SCALING (divide-by)
1
2
Available Options
DEVICE
TSL230RD
TSL230ARD
TSL230BRD
−25°C
to 70°C
−25°C
to 70°C
−25°C
to 70°C
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input voltage range, all inputs, V
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.3
V to V
DD
+ 0.3 V
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40°C
to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40°C
to 85°C
Solder conditions in accordance with JEDEC J−STD−020A, maximum temperature (see Note 2) . . . 260°C
†
NOTES: 1. All voltage values are with respect to GND.
2. The device may be hand soldered provided that heat is applied only to the solder pad and no contact is made between the tip of
the solder iron and the device lead. The maximum time heat should be applied to the device is 5 seconds.
Recommended Operating Conditions
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Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Te
Supply voltage, V
DD
High-level input voltage, V
IH
Low-level input voltage, V
IL
Operating free-air temperature range, T
A
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10
100
×
100
T
A
PACKAGE
−
LEADS
SOIC−8
SOIC−8
SOIC−8
PACKAGE DESIGNATOR
D
D
D
ORDERING NUMBER
TSL230RD
TSL230ARD
TSL230BRD
MIN
2.7
V
DD
= 4.5 V to 5.5 V
V
DD
= 4.5 V to 5.5 V
2
0
−25
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NOM
5
MAX
5.5
V
DD
0.8
70
V
V
V
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UNIT
°C
f
O
scaling-select inputs
TSL230RD, TSL230ARD, TSL230BRD
PROGRAMMABLE LIGHT-TO-FREQUENCY CONVERTERS
TAOS054P
−
OCTOBER 2007
Electrical Characteristics at T
A
= 25°C, V
DD
= 5 V (unless otherwise noted)
PARAMETER
V
OH
V
OL
I
IH
I
IL
I
DD
F.S.
k
SVS
High-level output voltage
Low-level output voltage
High-level input current
Low-level input current
Supply current
Full-scale frequency (See Note 3)
Temperature coefficient of output frequency
Supply voltage sensitivity
Power-on mode
Power-down mode
S0=S1=H, S2=S3=L
λ ≤
700 nm (See Note 4)
V
DD
= 5 V
±10%
1.1
2
5
TEST CONDITIONS
I
OH
=
−
4 mA
I
OL
= 4 mA
MIN
4
TYP
4.5
0.25
0.4
5
5
3
12
MAX
UNIT
V
V
μA
μA
mA
μA
MHz
Operating Characteristics at V
DD
= 5 V, T
A
= 25°C, E
e
= 126
μW/cm
2
,
λ
p
= 640 nm (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
TSL230RD
TYP
TSL230ARD
TYP
TSL230BRD
TYP
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
f
O
Output frequency
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S0 = S1 = H,
S2 = S3 = L
80
8
100
10
1
120
12
85
100
10
1
115
90
9
100
10
1
110
11
S1 = H,
S0 = S2 = S3 = L
S0 = H,
S1 = S2 = S3 = L
8.5
11.5
0.8
1.2
0.85
42.5
8.5
1.15
57.5
11.5
0.9
1
S0 = S1 = S2 = H,
S3 = L
S0 = S1 = S3 = H,
S2 = L
40
8
50
10
1
60
12
50
10
1
45
9
50
10
1
55
11
S0 = S1 = S2 = S3 = H
0.8
1.2
0.85
1.15
0.9
1.1
E
e
= 0, S0 = S1 = H,
S2 = S3 = L
S0 = S1 = H,
S2 = S3 = L
S2 = S3 = L
0.4
10
0.4
10
0.4
10
0.79
0.79
0.79
125
600
125
600
125
600
S2 or S3 = H
1/2f
O
±
0.1%
±
0.2%
±
0.5%
100
1/2f
O
±
0.1%
±
0.2%
±
0.5%
100
1 pulse of new frequency plus 1
μs
2 periods of new principal frequency plus 1
μs
(Note 7)
50
150
50
150
50
150
1/2f
O
±
0.1%
±
0.2%
±
0.5%
100
f
O
= 0 MHz to 10 kHz
f
O
= 0 MHz to 100 kHz
f
O
= 0 MHz to 1 MHz
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NOTES: 3. Full-scale frequency is the maximum operating frequency of the device without saturation.
4. The temperature coefficient of output frequency is measured with constant irradiance as the temperature is varied between
−25°C
and 70°C. The constant irradiance is sufficiently high that the output frequency is much greater than the dark frequency over the
entire temperature range.
f
D
R
e
t
w
Dark frequency
Responsivity
Output pulse
duration
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Nonlinearity
(See Notes 5 and 6)
Recovery from power down
Step response to full-scale step input
Response time to programming change
Response time to output enable (OE)
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NOTES: 5. Nonlinearity is defined as the deviation of f
O
from a straight line between zero and full scale, expressed as a percent of full scale.
6. Nonlinearity test condition: S0 = S1 = H, S2 = S3 = L.
7. Principal frequency is the internal oscillator frequency, equivalent to divide-by-1 output selection.
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±
200
±
0.5
ppm/°C
%/ V
kHz
Hz
kHz/
(μW/
cm
2
)
ns
s
%F.S.
μs
ns
Copyright
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2007, TAOS Inc.
3
TSL230RD, TSL230ARD, TSL230BRD
PROGRAMMABLE LIGHT-TO-FREQUENCY CONVERTERS
TAOS054P
−
OCTOBER 2007
TYPICAL CHARACTERISTICS
OUTPUT FREQUENCY
vs
IRRADIANCE
1000
V
DD
= 5 V
λ
p
= 640 nm
T
A
= 25°C
S2 = S3 = L
S0 = H, S1 = H
1.2
PHOTODIODE SPECTRAL RESPONSIVITY
Output Frequency (f
O
−
f
D
) — kHz
100
10
Normalized Responsivity
0.8
1
0.6
0.1
0.01
0.001
0.001 0.01 0.1
1
10
E
e
−
Irradiance
−
μW/cm
2
Figure 1
1.2
Temperature Coefficient of Output Frequency — ppm/5C
DARK FREQUENCY
vs
TEMPERATURE
V
DD
= 5 V
E
e
= 0
S0 = S1 = H
S2 = S3 = L
1
f
D
— Dark Frequency — Hz
0.8
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0.6
0.4
0.2
0
Te
−25
0
T
A
−
Temperature
−
°C
Figure 3
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S0 = L, S1 = H
0.4
S0 = H, S1 = L
0.2
100
1k
10k 100k
1M
0
300
400
500
600
700
800
900
1000 1100
λ
−
Wavelength
−
nm
Figure 2
TEMPERATURE COEFFICIENT
OF OUTPUT FREQUENCY
vs
WAVELENGTH OF INCIDENT LIGHT
7000
6000
5000
4000
3000
2000
1000
V
DD
= 5 V
25
50
75
0
300
400
500
600
700
800
λ
−
Wavelength of Incident Light
−
nm
Figure 4
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1.0