WS128K32-55G2TMA datasheet, PDF

WS128K32-55G2TMA: DescriptionSRAM Module, 128KX32, 55ns, CMOS, CQMA68, CERAMIC, QFP-68; Categorystorage storage; File Size509KB，10 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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WS128K32-55G2TMA Overview

SRAM Module, 128KX32, 55ns, CMOS, CQMA68, CERAMIC, QFP-68

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	QFP
package instruction	,
Contacts	68
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	55 ns
Other features	USER CONFIGURABLE AS 512K X 8
Spare memory width	16
JESD-30 code	S-CQMA-G68
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	68
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX32
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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