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r
i U^ioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Triacs
TIC225D
FEATURES
• With TO-220 package
• Sensitive Gate Triacs
• Glass Passivated
• Max IGT of 5 mA (Quadrants 1)
ABSOLUTE MAXIMUM RATINGS(Ta=25t)
SYMBOL
VDRM
VRRM
ll(RMS)
PARAMETER
MIN
UNIT
V
V
A
A
°C
Repetitive peak off-state voltage
Repetitive peak reverse voltage
RMS on-state current (full sine wave)Tc=70°C
Non-repetitive peak on-state current
Operating junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
400
400
8
70
110
ITSM
T,
Tstg
RthQ-c)
Rfh(j-a)
-45-150
2.5
62.5
°c
"C/W
°c/w
ELECTRICAL CHARACTERISTICS (T
C
=25'C unless otherwise specified)
SYMBOL
IDRM
PARAMETER
CONDITIONS
MAX
UNIT
Repetitive peak off-state current
V
D
=V
DRM
, T
C
=110°C
2.0
5
20
mA
I
I
I
IGT
Gate trigger current
ITT
IV
supply
T ^ VT, r<L
iU" , tp(g)
^Z(J
ti S
mA
10
30
IH
VGT
VTM
Holding current
Gate trigger voltage all quadrant
On-state voltage
Vsuppiy = 12 Vf, |Q= 0 initial I
T
M= 100mA
Vsupply = 1 2 Vt; RL= 1 0 0 ; t
p(g)
>20 n S
I
T
= 12A; I
G
= 50mA
20
2
2.1
mA
V
V
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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