CY14E104N-BA45XCT datasheet, PDF

CY14E104N-BA45XCT: DescriptionNon-Volatile SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48; Categorystorage storage; File Size644KB，22 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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CY14E104N-BA45XCT Overview

Non-Volatile SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Cypress Semiconductor
Parts packaging code	BGA
package instruction	TFBGA, BGA48,6X8,30
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	45 ns
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	10 mm
memory density	4194304 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	16
Mixed memory types	N/A
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.003 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	6 mm

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