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NAND512W3A0DZA6E

Description
Flash, 64MX8, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
Categorystorage    storage   
File Size1MB,53 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND512W3A0DZA6E Overview

Flash, 64MX8, 12000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63

NAND512W3A0DZA6E Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
Contacts63
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time12000 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee1
length11 mm
memory density536870912 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals63
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.05 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeSLC NAND TYPE
width9 mm
NAND512xxA2D
NAND01GxxA2C
512-Mbit, 1-Gbit, 528-byte/264-word page,
1.8 V/3 V, SLC NAND flash memories
Features
High density SLC NAND flash memories
512-Mbit, 1-Gbit memory array
Cost effective solutions for mass
storage applications
TSOP48 12 x 20 mm (N)
NAND interface
x8 or x16 bus width
Multiplexed address/ data
Supply voltage: 1.8 V, 3 V
Page size
x8 device: (512 + 16 spare) bytes
x16 device: (256 + 8 spare) words
x8 device: (16 K + 512 spare) bytes
x16 device: (8 K + 256 spare) words
Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
Page program time: 200 µs (typ)
FBGA
VFBGA63 9 x 11 x 1.05 mm (ZA)
Block size
Hardware data protection: program/erase
locked during power transitions
Security features
OTP area
Serial number (unique ID)
100,000 program/erase cycles (with
ECC)
10 years data retention
Page read/program
Data integrity
Copy back program mode
Fast block erase: 1.5 ms (typ)
Status register
Electronic signature
Chip Enable ‘don’t care’
RoHS compliant packages
Development tools
Error correction code models
Bad blocks management and wear
leveling algorithms
Hardware simulation models
Table 1.
Device summary
NAND512xxA2D
NAND512R3A2D
NAND512R4A2D
NAND512W3A2D
NAND512W4A2D
NAND01GxxA2C
NAND01GR3A2C
NAND01GR4A2C
NAND01GW3A2C
NAND01GW4A2C
November 2009
Rev 7
1/53
www.numonyx.com
1

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