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MV6100A

Description
Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

MV6100A Overview

Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14

MV6100A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionR-CDFP-F14
Contacts14
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 7 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CDFP-F14
JESD-609 codee0
Number of components7
Number of terminals14
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.3 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum reverse recovery time0.01 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

MV6100A Preview

6100A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 14-PIN package for use as steering
diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them
either to the positive side of the power supply line or to ground (see figure 1). An
external TVS diode may be added between the positive supply line and ground to
prevent overvoltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding
or encoding applications. These arrays offer many advantages of integrated circuits
such as high-density packaging and improved reliability. This is a result of fewer
pick and place operations, smaller footprint, smaller weight, and elimination of
various discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
14-PIN Ceramic
Flat Pack
FEATURES
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage V
BR
> 75 V at 5
μA
Low Leakage I
R
< 100 nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6100A for a JANTX screen.
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (See Circuit in
Figure 1)
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
MAXIMUM RATINGS
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
o
400 mW Power Dissipation per Junction @ 25 C
500 mW Power Dissipation per Package @ 25
o
C (Note 4)
Operating Junction Temperature range –65 to +150
o
C
Storage Temperature range of –65 to +150
o
C
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
Each Diode
Pulsed: P
W
= 100 ms max; duty cycle <20%
o
o
Derate at 2.4 mA/ C above +25 C
o
o
Derate at 4.0 mW/ C above +25 C
MECHANICAL AND PACKAGING
14-PIN Ceramic Flat Pack
Weight 0.29 grams (approximate)
Marking: Logo, part number, date code and
dot identifying pin #1
Carrier Tubes; 19 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
V
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
µA
MAXIMUM
REVERSE
CURRENT
I
R2
V
R
= 20 V
nA
MAXIMUM
CAPACITANCE
(PIN TO PIN)
MAXIMUM
FORWARD
RECOVERY
TIME
t
fr
I
F
= 100 mA
ns
MAXIMUM
REVERSE
RECOVERY TIME
trr
I
F
=
I
R
= 10 mAdc
i
rr
= 1 mAdc
R
L
= 100 ohms
ns
6100A
C
t
V
R
= 0 V
F = 1 MHz
pF
PART
NUMBER
MAXIMUM
FORWARD
VOLTAGE
MATCH
V
F5
I
F
= 10 mA
mV
6100A
1
0.1
25
4.0
15
10
5
NOTE 1:
Pulsed: P
W
= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright
©
2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
6100A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
SCOTTSDALE DIVISION
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
F
I
R
C
t
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
WWW .
Microsemi
.C
OM
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+V
CC
)
I/O Port
Symbol
BL
BW
CH
LL
LO
LO2
LS
LT
LU
LW
GND (or -V
CC
)
Steering Diode Application
FIGURE 1
Inches
Min
Max
.390
.235
.260
.045
.095
.250
.370
.005
.026
.045
.050 BSC
.003
.006
.280
.010
.019
Millimeters
Min
Max
9.91
5.97
6.60
1.14
2.41
6.35
9.40
0.13
0.66
1.14
1.27 BSC
0.08
0.15
7.11
0.25
0.48
6100A
Copyright
©
2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2

MV6100A Related Products

MV6100A MQ6100A MX6100A SP6100A
Description Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14 Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14 Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14 Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Microsemi Microsemi Microsemi Microsemi
package instruction R-CDFP-F14 R-CDFP-F14 R-CDFP-F14 R-CDFP-F14
Contacts 14 14 14 14
Reach Compliance Code unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Configuration SEPARATE, 7 ELEMENTS SEPARATE, 7 ELEMENTS SEPARATE, 7 ELEMENTS SEPARATE, 7 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-CDFP-F14 R-CDFP-F14 R-CDFP-F14 R-CDFP-F14
JESD-609 code e0 e0 e0 e0
Number of components 7 7 7 7
Number of terminals 14 14 14 14
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.3 A 0.3 A 0.3 A 0.3 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse recovery time 0.01 µs 0.01 µs 0.01 µs 0.01 µs
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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