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STP25N06

Description
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size150KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

STP25N06 Overview

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP25N06 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
STP25N06
STP25N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP25N06
STP25N06FI
VDSS
60 V
60 V
RoS(on)
ID
< 0.065 i
i
< 0.065 n
25 A
16 A
TYPICAL RDS(on) = 0.048 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175°C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
0(2)
0 (1)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
STP25N06
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (Ros = 20 kti)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 °C
Drain Current (continuous) at T
c
= 100 °C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 °C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
25
17
100
90
0.6
Value
Unit
STP25N06FI
V
V
V
16
11
100
40
A
A
A
W
60
60
VDGR
VGS
ID
ID
+ 20
!DM(.)
Plot
0.27
W/°C
V
°C
°C
Viso
Tstg
2000
-65 to 175
175
Tj
(•) Pulse width limited by safe operating area
Quality Semi-Conductors

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STP25N06 STP25N06FI
Description N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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