PD - 91578B
IRG4PH40K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
=
2.74V
@V
GE
= 15V, I
C
= 15A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
• This part replaces the IRGPH40K and IRGPH40M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
30
15
60
60
10
±20
180
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
2/7/2000
IRG4PH40K
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
T
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.37 —
V/°C V
GE
= 0V, I
C
= 1.0mA
— 2.54 —
I
C
= 10A
— 2.74 3.4
I
C
= 15A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
V
— 3.29 —
I
C
= 30A
See Fig.2, 5
— 2.53 —
I
C
= 15A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-3.3 — mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
U
8.0
12
—
S
V
CE
=
100 V, I
C
= 15A
—
—
250
V
GE
= 0V, V
CE
= 1200V
Zero Gate Voltage Collector Current
—
—
2.0
µA
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 3000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
94 140
I
C
= 15A
14
22
nC
V
CC
= 400V
See Fig.8
37
55
V
GE
= 15V
30
—
22
—
T
J
= 25°C
ns
200 300
I
C
= 15A, V
CC
= 960V
150 230
V
GE
= 15V, R
G
= 10Ω
0.73 —
Energy losses include "tail"
1.66 —
mJ See Fig. 9,10,14
2.39 2.9
—
—
µs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω
29
—
T
J
= 150°C,
24
—
I
C
= 15A, V
CC
= 960V
ns
870
—
V
GE
= 15V, R
G
= 10Ω
330
—
Energy losses include "tail"
4.93 —
mJ See Fig. 10,11,14
0.37 —
T
J
= 25°C, V
GE
= 15V, R
G
= 10Ω
0.89 —
mJ I
C
= 10A, V
CC
= 960V
1.26 —
Energy losses include "tail"
13
—
nH
Measured 5mm from package
1600 —
V
GE
= 0V
77
—
pF
V
CC
= 30V
See Fig. 7
26
—
ƒ = 1.0MHz
Details of note
Q
through
U
are on the last page
2
www.irf.com
IRG4PH40K
50
F o r b o th :
T ria n g u la r w a ve :
I
40
D uty c yc le: 50%
T J = 125° C
T s ink = 90°C
G ate drive as spec ified
P o w e r D is s ip a tio n = 3 5 W
Load Current ( A )
C la m p vo l ta g e :
8 0 % o f ra te d
30
S q u a re wave :
6 0 % o f ra te d
v o lta g e
20
I
10
Id e al d io de s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
°
C
10
T
J
= 150
°
C
10
T
J
= 25
°
C
T
J
= 25
°
C
V
= 50V
5µs PULSE WIDTH
CC
4
6
8
10
12
14
1
1
V
= 15V
20µs PULSE WIDTH
GE
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
www.irf.com
3
IRG4PH40K
30
4.0
25
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
3.5
I
C
= 30 A
20
15
3.0
10
I
C
= 15 A
2.5
5
I
C
= 7.5 A
0
25
50
75
100
125
150
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PH40K
2500
2000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 15A
16
C, Capacitance (pF)
Cies
1500
12
1000
8
500
C
oes
C
res
0
1
10
100
4
0
0
20
40
60
80
100
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
4.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
3.5
V
CC
= 960V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 15A
100
R
G
=
10
Ω
Ohm
V
GE
= 15V
V
CC
= 960V
I
C
=
30
A
10
I
C
=
15
A
I
C
=
7.5
A
1
3.0
2.5
2.0
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
G
Gate Resistance (Ohm)
R
,
, Gate Resistance (
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
