MV66404-10B0DG datasheet, PDF - EEWORLD Datasheet

MV66404-10B0DG: DescriptionFIFO, 64X5, 40ns, Asynchronous, CMOS, CDIP18,; Categorystorage storage; File Size383KB，7 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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MV66404-10B0DG Overview

FIFO, 64X5, 40ns, Asynchronous, CMOS, CDIP18,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Dynex
package instruction	DIP, DIP18,.3
Reach Compliance Code	unknown
Maximum access time	40 ns
Maximum clock frequency (fCLK)	10 MHz
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
Memory IC Type	OTHER FIFO
memory width	5
Number of terminals	18
word count	64 words
character code	64
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64X5
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Maximum slew rate	0.03 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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