6000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8
Parameter Name | Attribute value |
Maker | Renesas Electronics Corporation |
Parts packaging code | TSSOP |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Contacts | 8 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | ESD PROTECTED |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 20 V |
Maximum drain current (Abs) (ID) | 6 A |
Maximum drain current (ID) | 6 A |
Maximum drain-source on-resistance | 0.029 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G8 |
JESD-609 code | e0 |
Number of components | 2 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 2 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |