EDI8F81024C120BSC datasheet, PDF

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EDI8F81024C120BSC: DescriptionSRAM Module, 1MX8, 120ns, CMOS,; Categorystorage storage; File Size150KB，6 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8F81024C120BSC Overview

SRAM Module, 1MX8, 120ns, CMOS,

EDI8F81024C120BSC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	120 ns
I/O type	COMMON
JESD-30 code	R-XSMA-T36
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	36
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
Encapsulate equivalent code	SIP36
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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EDI8F81024C120BSC Related Products

	EDI8F81024C120BSC	EDI8F81024LP120BSC	EDI8F81024LP150BSC	EDI8F81024C150BSC
Description	SRAM Module, 1MX8, 120ns, CMOS,	SRAM Module, 1MX8, 120ns, CMOS, MODULE, SIP-36	SRAM Module, 1MX8, 150ns, CMOS, MODULE, SIP-36	SRAM Module, 1MX8, 150ns, CMOS,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	120 ns	120 ns	150 ns	150 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-T36	R-XSMA-T36	R-XSMA-T36	R-XSMA-T36
JESD-609 code	e0	e0	e0	e0
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	36	36	36	36
word count	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	1MX8	1MX8	1MX8	1MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Encapsulate equivalent code	SIP36	SIP36	SIP36	SIP36
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.02 A	0.0003 A	0.0003 A	0.02 A
Minimum standby current	4.5 V	2 V	2 V	4.5 V
Maximum slew rate	0.13 mA	0.13 mA	0.13 mA	0.13 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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