JAN1N6111 datasheet, PDF - EEWORLD Datasheet

JAN1N6111: DescriptionTrans Voltage Suppressor Diode, 500W, 12.2V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size109KB，2 Pages; ManufacturerSEMTECH; Websitehttp://www.semtech.com

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Trans Voltage Suppressor Diode, 500W, 12.2V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

Parameter Name	Attribute value
Maker	SEMTECH
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Minimum breakdown voltage	15.2 V
Breakdown voltage nominal value	16 V
Shell connection	ISOLATED
Maximum clamping voltage	23.415 V
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e2
Maximum non-repetitive peak reverse power dissipation	500 W
Number of components	2
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	BIDIRECTIONAL
Maximum power dissipation	1.5 W
Certification status	Qualified
Guideline	MIL-19500/516
Maximum repetitive peak reverse voltage	12.2 V
Maximum reverse current	20 µA
surface mount	NO
technology	ZENER
Terminal surface	TIN COPPER
Terminal form	WIRE
Terminal location	AXIAL

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