AP04N70BI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
2.4Ω
4A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
600
+30
4
2.5
15
33
0.26
8
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.8
65
Unit
℃/W
℃/W
1
201102253
Data & specifications subject to change without notice
AP04N70BI-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
3
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
2.5
-
-
-
16.7
4.1
4.9
11
8.3
23.8
8.2
950
65
6
Max. Units
-
-
2.4
4
-
10
500
+100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
V
GS
=10V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2A
V
DS
=600V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=4A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=4A
R
G
=10Ω,V
GS
=10V
R
D
=75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=480V
,
V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by max. junction temperature
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=4A.
3.Pulse test
o
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
1
Min.
-
-
-
Typ.
-
-
-
Max. Units
4
15
1.5
A
A
V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
T
j
=25℃, I
S
=4A, V
GS
=0V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N70BI-HF
2.5
2
T
C
=25
o
C
2
V
G
=10V
V
G
=6.0V
1.5
T
C
=150
o
C
V
G
=10V
V
G
=6.0V
V
G
=5.0V
V
G
=4.5V
1
I
D
, Drain Current (A)
1.5
V
G
=4.5V
1
I
D
, Drain Current (A)
V
G
=5.0V
0.5
V
G
=4.0V
V
G
=3.5V
0.5
V
G
=4.0V
0
0
1
2
3
4
5
6
7
0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
=2A
V
G
=10V
1.1
2
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
o
150
1.6
1
1.2
0.8
0.9
0.4
0.8
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP04N70BI-HF
4.5
40
4
3.5
30
I
D
, Drain Current (A)
3
P
D
(W)
2.5
20
2
1.5
10
1
0.5
0
25
50
75
100
125
150
0
0
50
100
150
T
c
, Case Temperature (
o
C)
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
10
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
100us
I
D
(A)
1
0.1
0.1
0.05
1ms
10ms
100ms
0.02
P
DM
0.1
t
0.01
1s
T
c
=25
o
C
Single Pulse
0.01
1
10
100
1000
T
DC
0.01
SINGLE PULSE
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP04N70BI-HF
16
f=1.0MHz
10000
I
D
=4A
V
GS
, Gate to Source Voltage (V)
12
V
DS
=320V
V
DS
=400V
V
DS
=480V
C (pF)
Ciss
8
100
Coss
4
Crss
0
0
5
10
15
20
25
1
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
T
j
=150
o
C
I
S
(A)
V
GS(th)
(V)
T
j
= 25
o
C
3
2
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature (
o
C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
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