MGFC39V5964A-51 datasheet, PDF

MGFC39V5964A-51: DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET; CategoryDiscrete semiconductor The transistor; File Size82KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGFC39V5964A-51 Overview

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Maximum drain current (Abs) (ID)	7.5 A
Maximum drain current (ID)	7.5 A
FET technology	JUNCTION
highest frequency band	C BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	42.8 W
Minimum power gain (Gp)	8 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

	MGFC39V5964A-51	MGFC39V5964A-01
Description	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
Maker	Mitsubishi	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Maximum drain current (Abs) (ID)	7.5 A	7.5 A
Maximum drain current (ID)	7.5 A	7.5 A
FET technology	JUNCTION	JUNCTION
highest frequency band	C BAND	C BAND
JESD-30 code	R-CDFM-F2	R-CDFM-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	175 °C	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	42.8 W	42.8 W
Minimum power gain (Gp)	8 dB	8 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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