HS2DAF-TR3G datasheet, PDF - EEWORLD Datasheet

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HS2DAF-TR3G: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size486KB，6 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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HS2DAF-TR3G Overview

Rectifier Diode,

HS2DAF-TR3G Parametric

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
Reach Compliance Code	unknown
Diode type	RECTIFIER DIODE

HS2DAF-TR3G Preview

HS2DAF-T - HS2MAF-T

Taiwan Semiconductor

2A, 200V-1000V High Efficient Surface Mount Rectifier

FEATURES

●

Glass passivated junction chip

Ideal for automated placement

Low reverse leakage

Moisture sensitivity level: level 1, per J-STD-020

Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

KEY PARAMETERS

PARAMETER

RRM

FSM

J MAX

Package

VALUE

200-1000

150

SMAF

UNIT

°C

APPLICATIONS

● Switch Mode Power Supply

● Inverters and Converters

● Free Wheeling diodes

MECHANICAL DATA

●

Case: SMAF

Molding compound meets UL 94V-0 flammability rating

Terminal: Matte tin plated leads, solderable per J-STD-002

Meet JESD 201 class 1 whisker test

Polarity: Indicated by cathode band

Weight: 0.035 g (approximately)

SMAF

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise noted)

PARAMETER

Marking code on the device

Repetitive peak reverse voltage

Reverse voltage, total rms value

DC blocking voltage

Forward current

Surge peak forward

8.3 ms at T

= 25°C

current single half sine-

wave superimposed on 1.0 ms at T = 25°C

rated load

Junction temperature

Storage temperature

RRM

R(RMS)

FSM

130

STG

-55 to +150

°C

SYMBOL

HS2D

AF-T

200

140

200

HS2G

AF-T

400

280

400

HS2J

AF-T

600

420

600

HS2K

AF-T

800

560

800

HS2M

AF-T

1000

700

1000

UNIT

HS2DAF HS2GAF HS2JAF HS2KAF HS2MAF

Version:A1906

HS2DAF-T - HS2MAF-T

Taiwan Semiconductor

THERMAL PERFORMANCE

PARAMETER

Junction-to-lead thermal resistance

Junction-to-ambient thermal resistance

Junction-to-case thermal resistance

SYMBOL

ӨJL

ӨJA

ӨJC

TYP

UNIT

°C/W

Thermal Performance Note:

Units mounted on PCB (5mm x 5mm Cu pad test board)

ELECTRICAL SPECIFICATIONS

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

= 1A, T

= 25°C

HS2DAF-T

= 2A, T

= 25°C

= 1A, T

= 125°C

= 2A, T

= 125°C

= 1A, T

= 25°C

Forward voltage

(1)

SYMBOL

TYP

0.84

0.91

0.68

0.78

0.94

MAX

1.0

0.94

1.4

1.07

1.7

1.31

250

UNIT

µA

HS2GAF-T

= 2A, T

= 25°C

= 1A, T

= 125°C

= 2A, T

= 125°C

= 1A, T

= 25°C

1.04

0.77

0.88

1.19

1.33

0.96

1.10

HS2JAF-T

HS2KAF-T

HS2MAF-T

= 2A, T

= 25°C

= 1A, T

= 125°C

= 2A, T

= 125°C

= 25°C

= 125°C

Reverse current @ rated V

(2)

HS2DAF-T

HS2GAF-T

Reverse recovery time

HS2JAF-T

HS2KAF-T

HS2MAF-T

HS2DAF-T

HS2GAF-T

HS2JAF-T

HS2KAF-T

HS2MAF-T

=0.5A,I

=1.0A,

Irr=0.25A

Junction capacitance

1 MHz, V

=4.0V

Notes:

(1) Pulse test with PW=0.3 ms

(2) Pulse test with PW=30 ms

ORDERING INFORMATION

ORDERING CODE

HS2XAF-T R3G

(1)

PACKAGE

SMAF

PACKING

1,800 / 7" Plastic reel

7,500 / 13" Plastic reel

7,500 / 13" Paper reel

HS2XAF-T M2G

HS2XAF-T R2G

(1)

Notes:

(1) “X” defines voltage from 200V(HS2DAF-T) to 1000V(HS2MAF-T)

Version:A1906

HS2DAF-T - HS2MAF-T

Taiwan Semiconductor

CHARACTERISTICS CURVES

= 25°C unless otherwise noted)

Fig.1 Forward Current Derating Curve

100.0

f=1.0MHz

Vsig=50mVp-p

AVERAGE FORWARD CURRENT (A)

Fig.2 Typical Junction Capacitance

CAPACITANCE (pF)

10.0

HS2DAF-T

HS2GAF-T

HS2JAF-T to HS2MAF-T

1.0

100

125

150

REVERSE VOLTAGE (V)

100

LEAD TEMPERATURE (

Fig.3 Typical Reverse Characteristics

100

INSTANTANEOUS REVERSE CURRENT (μA)

Fig.4 Typical Forward Characteristics

10 10

HS2DAF-T

=150°C

INSTANTANEOUS FORWARD CURRENT (A)

HS2DAF-T

=150°C

0.1

=25°C

0.01

0.001

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

UF1DLW

=125°C

=25°C

(A)

=125°C

1 0.1

=-55°C

=25°C

0.01

Pulse width 300μs

Pulse width

1% duty cycle

0.001

0.1

0.4 0.3

0.4

0.6

0.5 0.80.6

0.7

0.8 1.20.9

1.4

1.1

1.2

FORWARD VOLTAGE (V)

Fig.5 Typical Reverse Characteristics

100

INSTANTANEOUS REVERSE CURRENT (μA)

Fig.6 Typical Forward Characteristics

10 10

INSTANTANEOUS FORWARD CURRENT (A)

HS2GAF-T

=150°C

HS2GAF-T

=150°C

UF1DLW

=125°C

0.1

0.01

0.001

100

=25°C

1 0.1

=-55°C

0.01

Pulse width 300μs

1% duty cycle

Pulse width

0.3

0.6

0.4

0.8

0.5

0.6

0.7

1.2

0.8

1.4

0.9

1.6

1.1

1.2

0.1

0.001

0.4

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FORWARD VOLTAGE (V)

Version:A1906

(A)

=25°C T =25°C

HS2DAF-T - HS2MAF-T

Taiwan Semiconductor

Fig.7 Typical Reverse Characteristics

100

INSTANTANEOUS REVERSE CURRENT (μA)

Fig.8 Typical Forward Characteristics

10 10

INSTANTANEOUS FORWARD CURRENT (A)

HS2JAF-T to HS2MAF-T

=150°C

HS2JAF-T to HS2MAF-T

=150°C

=125°C

UF1DLW

=125°C

=25°C

0.1

=-55°C

0.01

0.1

0.01

100

0.1

0.001

0.4 0.6 0.8

0.3

0.4

0.5

Pulse width 300μs

1% duty cycle

Pulse width

1.2

0.6

1.4 1.6 1.8

0.7

0.8

0.9

2.2

1.1

1.2

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FORWARD VOLTAGE (V)

Fig.9 Typical Transient Thermal Impedance

100

TRANSIENT THERMAL IMPEDANCE (°C/W)

0.1

0.01

0.001

0.0001

0.000001

0.00001

0.0001

0.001

0.01

PULSE DURATION (s)

0.1

100

Version:A1906

(A)

=25°C

HS2DAF-T - HS2MAF-T

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

(Unit:

Millimeters)

SMAF

SUGGESTED PAD LAYOUT

MARKING DIAGRAM

P/N

= Marking Code

= Green Compound

= Date Code

= Factory Code

Version:A1906

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HS2DAF-TR3G Related Products

	HS2DAF-TR3G	HS2DAF-TR2G	HS2DAF-TM2G
Description	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Reach Compliance Code	unknown	unknown	unknown
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE

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