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1S40

Description
1 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size60KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
Download Datasheet Parametric Compare View All

1S40 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

1S40 Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature125 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage40 V
surface mountNO
1S20
THRU
1S100
1.0 AMP SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
20 to 100 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
1.0 Ampere
R-1
.102(2.6)
.091(2.3)
DIA.
.787(20.0)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.126(3.2)
.106(2.7)
.025(0.65)
.021(0.55)
DIA.
.787(20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at T
L
=100 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance R JL (Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
1S20
20
14
20
1S30
30
21
30
1S40
40
28
40
1S50
50
35
50
1.0
30
1S60
60
42
60
1S80
80
56
80
1S100 UNITS
100
70
100
V
V
V
A
A
V
mA
mA
pF
C/W
C
C
0.55
0.5
10
110
0.70
0.85
Ta=100 C
80
10
-65 +150
-65 +150
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Lead Vertical PC Board Mounting 0.375"(9.5mm) Lead Length.
8

1S40 Related Products

1S40 1S100 1S30 1S5 1S60 1S80 1S20
Description 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 80 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) - Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknow unknow unknow - unknow unknow unknow
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.55 V 0.85 V 0.55 V - 0.7 V 0.85 V 0.55 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A - 30 A 30 A 30 A
Number of components 1 1 1 - 1 1 1
Maximum operating temperature 125 °C 150 °C 125 °C - 150 °C 150 °C 125 °C
Maximum output current 1 A 1 A 1 A - 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 40 V 100 V 30 V - 60 V 80 V 20 V
surface mount NO NO NO - NO NO NO
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