TIGER ELECTRONIC CO.,LTD
SMD Type
P-Channel Enhancement Mode
Field Effect Transistor
KO3415
MOSFET
IC
Features
V
DS (V)
= -20V
I
D
= -4 A
+0.2
2.8
-0.2
SOT-23-3
+0.2
2.9
-0.2
+0.1
0.4
-0.05
Unit: mm
R
DS(ON)
R
DS(ON)
R
DS(ON)
43m
54m
73m
(V
GS
= -4.5V)
(V
GS
= -2.5V)
(V
GS
= -1.8V)
+0.2
1.6
-0.1
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.2
-0.2
1.9
1.1
+0.2
-0.1
1. Gate
+0.1
0.38
-0.1
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current *1
T
A
=25
T
A
=70
I
DM
P
D
R
R
JA
JC
Symbol
V
DS
V
GS
I
D
Rating
-20
8
-4.0
-3.5
-30
1.4
0.9
125
60
-55 to 150
Unit
V
V
A
Pulsed Drain Current *2
Power Dissipation *1
T
A
=25
T
A
=70
Thermal Resistance.Junction-to-Ambient
Thermal Resistance.Junction-to-Case
Junction and Storage Temperature Range
*1The value of R
JA
W
/W
/W
T
J
, T
STG
is measured with the device mounted on 1in
2
FR-4 board with 2oz.
Copper, in a still air environment with T
A
=25
*2 Repetitive rating, pulse width limited by junction temperature.
0-0.1
1
SMD Type
KO3415
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
V
DSS
I
DSS
Testconditons
I
D
=-250 A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
DS
=-16V, V
GS
=0V ,T
J
=55
Gate-Body leakage current
Gate Threshold Voltage
I
GSS
V
GS(th)
V
DS
=0V, V
GS
= 4.5V
V
DS
=0V, V
GS
= 8V
V
DS
=V
GS
I
D
=-250 A
V
GS
=-4.5V, I
D
=-4A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-2A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-0ff DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V
I
F
=-4A, d
I
/d
t
=100A/
I
F
=-4A, d
I
/d
t
=100A/
s
s
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.5 ,R
GEN
=3
V
GS
=-4.5V, V
DS
=- =-10V, I
D
=-4A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-4A
-25
8
T
J
=125
-0.3
Min
-20
MOSFET
IC
Typ
Max
Unit
V
-1
-5
1
10
-0.55
35
48
45
56
-1
43
60
54
73
A
16
1450
205
160
6.5
17.2
1.3
4.5
9.5
17
94
35
31
13.8
-2.2
-0.78
-1
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
V
S
pF
pF
pF
m
A
A
A
V
2
SMD Type
KO3415
Typical Characteristics
25
20
15
10
V
GS
=-1.5V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
V
GS
=-1.8V
R
DS(ON)
(m
Ω
)
60
V
GS
=-2.5V
40
V
GS
=-4.5V
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=-4A
-I
S
(A)
1.6
2
0
0
0.5
1
10
V
DS
=-5V
8
-2.0V
-I
D
(A)
-I
D
(A)
-2.5V
6
4
125°C
MOSFET
IC
-8V
-4.5V
-3.0V
25°C
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
=-4A, V
GS
=-2.5V
1.4
I
D
=-2A, V
GS
=-1.8V
1.2
I
D
=-4A, V
GS
=-4.5V
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
0.0
0.2
0.4
0.6
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
25°C
0.8
1.0
1.2
3
SMD Type
KO3415
5
4
-V
GS
(Volts)
3
2
1
0
0
5
10
15
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-10V
I
D
=-4A
Capacitance (pF)
2400
2000
1600
1200
800
C
oss
400
C
rss
0
0
5
10
C
iss
MOSFET
IC
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
40
10µs
30
Power (W)
100µs
1ms
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
20
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
10
10ms
0.1s
10
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
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