SMD Type
N-Channel
MOSFET
AO6404-HF
(KO6404-HF)
( SOT-23-6 )
MOSFET
Unit: mm
0.4
-0.1
+0.1
■
Features
●
V
DS (V)
= 20V
●
I
D
= 8.6 A (V
GS
= 10V)
●
R
DS(ON)
＜
17mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
18mΩ (V
GS
= 4.5V)
●
R
DS(ON)
＜
24mΩ (V
GS
= 2.5V)
●
R
DS(ON)
＜
33mΩ (V
GS
= 1.8V)
●
ESD Rating: 2000V HBM
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.2
-0.1
6
5
4
+0.2
1.6
-0.1
+0.2
2.8
-0.1
1
2
3
+0.01
-0.01
0.55
0.4
+0.02
0.15
-0.02
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
t
≤
10s
Steady-State
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJL
T
J
T
stg
Rating
20
±12
8.6
6.8
30
2
1.28
62.5
110
50
150
-55 to 150
℃
℃/W
W
A
Unit
V
+0.1
0.68
-0.1
D
0-0.1
+0.1
1.1
-0.1
1 Drain 4 Source
2 Drain 5 Drain
3 Gate 6 Drain
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1
SMD Type
N-Channel
MOSFET
AO6404-HF
(KO6404-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
V
DSS
BV
GSO
I
DSS
I
GSS
V
GS(th)
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=0V, I
G
=±250uA
V
DS
=16V, V
GS
=0V
V
DS
=16V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
, I
D
=250 uA
V
GS
=10V, I
D
=8.5A
V
GS
=10V, I
D
=8.5A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
GS
=1.8V, I
D
=3A
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=1A,V
GS
=0V
I
F
= 8.5A, d
I
/d
t
= 100A/us
V
GS
=10V, V
DS
=10V, R
L
=1.2Ω,R
G
=3Ω
V
GS
=4.5V, V
DS
=10V, I
D
=8.5A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=8A
30
T
J
=125℃
0.5
Min
20
±12
MOSFET
Typ
Max
Unit
V
10
25
±10
1
17
20
18
24
33
uA
uA
V
mΩ
A
36
1810
232
200
1.6
17.9
1.5
4.7
2.5
7.2
49
10.8
22
9.8
2.9
1
nC
A
V
ns
nC
Ω
pF
S
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■
Marking
Marking
D4**
F
2
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SMD Type
N-Channel
MOSFET
AO6404-HF
(KO6404-HF)
■
Typical Characterisitics
40
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
30
25
R
DS(ON)
(mΩ)
Ω
20
15
10
5
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
1.6
V
GS
=1.5V
5
0
0
I
D
(A)
10
2.5V
4.5V
30
2V
25
20
15
10
125°C
V
DS
=5V
MOSFET
25°C
V
GS
(Volts)
Figure 2: Transfer Characteristics
0.5
1
1.5
2
2.5
I
D
=5A
V
GS
=4.5V
V
GS
=2.5V
V
GS
=10V
V
GS
=1.8V
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
35
30
R
DS(ON)
(mΩ)
Ω
25
20
15
10
5
0
0
2
4
6
I
D
=5A
10
1
125°C
I
S
(A)
0.1
0.01
0.001
125°C
25°C
25°C
0.0001
8
10
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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3
SMD Type
N-Channel
MOSFET
AO6404-HF
(KO6404-HF)
■
Typical Characterisitics
5
4
V
GS
(Volts)
3
2
1
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3000
2500
Capacitance (pF)
2000
1500
1000
500
0
0
C
oss
C
rss
5
10
C
iss
MOSFET
V
DS
=10V
I
D
=8A
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
DS(ON)
limited
40
Power (W)
I
D
(Amps)
10.0
100µs
1ms
10ms
10µs
30
T
J(Max)
=150°C
T
A
=25°C
20
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
1s
DC
0.1s
10
0
V
DS
(Volts)
10
.
100
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/(T
on
+T
off
)
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
off
0.01
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
100
1000
4
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