2SC2668
Elektronische Bauelemente
0.02A , 40V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Reverse Transfer Capacitance.
Low Noise Figure.
TO-92S
REF.
Millimeter
Min.
Max.
3.90
4.10
3.05
3.25
1.42
1.62
15.1
15.5
2.97
3.27
0.66
0.86
2.44
2.64
1.27 REF.
0.36
0.48
0.36
0.51
45°
CLASSIFICATION OF h
FE
Product-Rank
Range
2SC2668-R
40~80
2SC2668-O
70~140
2SC2668-Y
100~200
A
B
C
D
E
F
G
H
J
K
L
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
40
30
4
20
200
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Reverse Transfer Capacitance
Collector-Base Time Constant
Transition Frequency
Power Gain
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
C
re
C
C
•
r
bb
f
T
Gpe
NF
Min.
40
30
4
-
-
40
-
-
-
-
-
Typ.
-
-
-
-
-
-
0.7
-
550
18
-
Max.
-
-
-
0.5
0.5
200
-
30
-
-
5
Unit
V
V
V
µA
µA
pF
pS
MHz
dB
dB
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, f=1MHz
V
CE
=6V, I
E
= -1mA, f=30MHz
V
CE
=6V, I
C
=1mA
V
CC
=6V, I
C
=1mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Apr-2012 Rev. A
Page 1 of 2
2SC2668
Elektronische Bauelemente
0.02A , 40V
NPN Plastic-Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Apr-2012 Rev. A
Page 2 of 2
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