Preliminary
Datasheet
RQK0203SGDQA
Silicon N Channel MOS FET
Power Switching
Features
•
Low on-resistance
R
DS(on)
= 68 mΩ typ (V
GS
= 4.5 V, I
D
= 1.5 A)
•
Low drive current
•
High speed switching
•
2.5 V gate drive
R07DS0303EJ0500
Rev.5.00
Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
2
1
2
G
1. Source
2. Gate
3. Drain
S
1
Note:
Marking is “SG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
20
±12
2.9
10
2.9
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0303EJ0500 Rev.5.00
Jan 10, 2014
Page 1 of 7
RQK0203SGDQA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
20
±12
—
—
0.4
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
68
105
5.0
159
48
20
11
81
27
8
1.9
0.4
0.5
0.85
Max
—
—
±10
1
1.4
90
150
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 μA,
V
DS
= 0
V
GS
=
±10
V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.5 A, V
GS
= 4.5 V
Note3
I
D
= 1.5 A, V
GS
= 2.5 V
Note3
I
D
= 1.5 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1.5 A
V
GS
= 4.5 V
R
L
= 6.6
Ω
Rg = 4.7
Ω
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 2.9A
I
F
= 2.9 A, V
GS
= 0
Note3
R07DS0303EJ0500 Rev.5.00
Jan 10, 2014
Page 2 of 7
RQK0203SGDQA
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
100
Operation in this area
is limited by R
DS(on)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
10
m
10 s
m
=
10
s
D
0
C
m
O
s
pe
ra
tio
n
1
10
0
PW
μ
s
0.6
1
0.4
0.1
Ta = 25°C
1 Shot Pulse
0.2
0
0
50
100
150
0.01
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
10 V
Typical Output Characteristics
5V
Typical Transfer Characteristics
(1)
8
V
DS
= 10 V
Pulse Test
8
2.6 V
2.8 V
Pulse Test
Tc = 25
°
C
2.4 V
Drain Current I
D
(A)
Drain Current I
D
(A)
2.2 V
2.0 V
6
3V
6
4
1.8 V
1.6 V
4
2
1.4 V
V
GS
= 0 V
2 Tc = 75°C
25°C
0
0
2
4
6
8
10
0
0
1
–25°C
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics
(2)
1
V
DS
= 10 V
Pulse Test
Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
1.5
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
0.1
Tc = 75°C
0.01
25°C
0.001
–25°C
1
I
D
= 10 mA
0.5
1 mA
0.1 mA
0.0001
0
0.5
1
1.5
2
2.5
3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0303EJ0500 Rev.5.00
Jan 10, 2014
Page 3 of 7
RQK0203SGDQA
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
500
400
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
300
100
V
GS
= 2.5 V
4.5 V
10 V
200
1A
100
0.5 A
0
0
2
4
6
8
2.9 A
1.5 A
10
10
0.1
1
10
100
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
180
160
I
D
= 2.9 A
140
120
100
1A
80
0.5 A
60
–25
0
25
50
75
Pulse Test
V
GS
=
2
.5 V
100 125 150
1.5 A
120
110
100
90
80
70
60
50
40
–25
0
25
50
75
100 125 150
0.5 A
1A
Pulse Test
V
GS
= 4.5 V
I
D
= 2.9 A
1.5 A
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
1000 V
DS
= 20 V
100
Forward Transfer Admittance
|yfs| (S)
10
–25°C
25°C
1
Tc = 75°C
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
10
1
0.1
–25
0.1
0.01
Pulse Test
V
DS
= 10 V
0.1
1
10
100
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
R07DS0303EJ0500 Rev.5.00
Jan 10, 2014
Page 4 of 7
RQK0203SGDQA
Dynamic Input Characteristics
Switching Characteristics
Preliminary
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
V
GS
30
16
1000
12
Switching Time
t (ns)
100
V
DD
= 10 V
V
GS
= 4.5 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
tr
20
V
DD
= 20 V
10 V
5V
5V
10 V
V
DD
= 20 V
8
td(off)
td(on)
10
tf
1
0.1
10
V
DS
0
0
1
2
3
4
5
I
D
= 2.9 A
Tc = 25°C
4
0
6
1
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
320
300
Ciss
100
Coss
Crss
10
V
GS
= 0 V
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
280
Ciss (pF)
260
240
220
200
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
1
0
5
10
15
20
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
10
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
V
GS
= 0
0.5
Reverse Drain Current I
DR
(A)
10 V
8
5V
6
Pulse Test
Tc = 25°C
Body-Drain Diode Forward Voltage V
SDF
(V)
0.4
I
D
= 10 mA
4
0.3
1 mA
0.2
0.1
25
2
0
0
–5, –10 V
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0303EJ0500 Rev.5.00
Jan 10, 2014
Page 5 of 7
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