MMDT2227
Elektronische Bauelemente
RoHS Compliant Product
NPN-PNP Silicon
Multi-Chip Transistor
SOT-363
.055(1.40)
.047(1.20)
8
o
0
o
*
Features
Power dissipation
P
CM
: 0.2 W (Tamp.= 25 C)
O
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
Collector current
I
CM
: 0.2/-0.2 A
Collector-base voltage
V
(BR)CBO
: 75/-60 V
Operating & Storage junction Temperature
T
j
, T
stg
: -55 C~ +150 C
O
O
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
C
2
B
1
E
1
.043(1.10)
.035(0.90)
E
2
B
2
C
1
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25
O
C unless otherwise specified)
NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
BE(sat)1
Base -emitter saturation voltage
V
BE(sat)2
Transition frequency
Collector output capacitance
Noise Figure
I
C
=
500
mA,I
B
=
50
mA
V
CE
=
20
V,I
C
=
20
mA,f=100MHz
V
CB
=
10
V,I
E
=0,f=
1
MHz
V
CE
=
10
V,I
c
=
0.1
mA,
f=
1K
HZ,Rs=
1
KΩ
300
8
4
2
V
MHz
pF
dB
I
C
=
500
mA,I
B
=
50
mA
I
C
=1
50
mA,I
B
=1
5
mA
1
V
V
Test
conditions
unless
otherwise
MIN
75
specified）
TYP
MAX
UNIT
V
V
V
Ic=1
0
μA,I
E
=0
Ic=
10
mA,I
B
=0
I
E
=1
0
μA,I
C
=0
V
CB
=
60
V,I
E
=0
V
EB
=3V,I
C
=0
V
CE
=10V,I
C
=
150
mA
I
C
=1
50
mA,I
B
=1
5
mA
40
6
10
10
100
300
0.3
nA
nA
V
1.2
f
T
C
ob
NF
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Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of
6
MMDT2227
Elektronische Bauelemente
NPN-PNP Silicon
Multi-Chip Transistor
PNP2907A ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
BE(sat)1
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
V
BE(sat)2
Test
conditions
unless
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
Ic=-1
0
μA,I
E
=0
Ic=-
10
mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-5
0
V,I
E
=0
V
EB
=-3V,I
C
=0
V
CE
=-10V,I
C
=-
150
mA
I
C
=-1
50
mA,I
B
=-1
5
mA
I
C
=-
500
mA,I
B
=-
50
mA
I
C
=-1
50
mA,I
B
=-1
5
mA
I
C
=-
500
mA,I
B
=-
50
mA
V
CE
=-
20
V,I
C
=-50mA,f=100MHz
V
CB
=-
10
V,I
E
=0,f=
1
MHz
-60
-60
-5
-10
-10
100
300
nA
nA
-0.4
-1.6
V
V
V
V
MHz
-1.3
-2.6
200
8
f
T
C
ob
pF
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
–2 V
1.0 to 100
µs,
Duty Cycle
≈
2.0%
1 kΩ
< 2 ns
200
+16 V
0
CS* < 10 pF
–14 V
< 20 ns
1k
1N914
CS* < 10 pF
1.0 to 100
µs,
Duty Cycle
≈
2.0%
+ 30 V
200
–4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
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Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
2
of
6
MMDT2227
Elektronische Bauelemente
NPN-PNP Silicon
Multi-chip Transistor
NPN2222
1000
700
500
300
hFE , DC Current Gain
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, Collector Current (mA)
30
50
70
100
200
300
500 700 1.0 k
Figure 3. DC Current Gain
1.0
VCE , Collector–Emitter Voltage (V)
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I B, Base Current (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
100
70
50
t, Time (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
20 30
50 70 100
I C, Collector Current (mA)
200 300
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
500
300
200
100
70
50
30
20
10
7.0
5.0
5.0 7.0 10
20
30
50 70 100
I C, Collector Current (mA)
200
300
500
t′s = ts – 1/8 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, Time (ns)
tf
Figure 5. Turn – On Time
Figure 6. Turn – Off Time
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01-Jan-2006 Rev.
B
Page
3
of
6
MMDT2227
Elektronische Bauelemente
NPN-PNP Silicon
Multi-Chip Transistor
NPN2222
10
8.0
NF, Noise Figure (dB)
IC = 1.0 mA, RS = 150
Ω
500
µA,
RS = 200
Ω
100
µA,
RS = 2.0 kΩ
50
µA,
RS = 4.0 kΩ
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
NF, Noise Figure (dB)
10
f = 1.0 kHz
8.0
IC = 50
µA
100
µA
500
µA
1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
f, Frequency (kHz)
5.0 10
20
50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, Source Resistance (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
f T, Current–Gain Bandwidth Products (MHz)
20
Ceb
Capacitance (pF)
10
7.0
5.0
Ccb
3.0
2.0
0.1
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
Reverse Voltage (V)
20 30
50
2.0
3.0
5.0 7.0 10
20
IC, Collector Current (mA)
30
50
70 100
Figure 9. Capacitances
Figure 10. Current–Gain Bandwidth Product
1.0
TJ = 25°C
0.8
Coefficient (mV/
°
C)
VBE(sat) @ IC/IB = 10
V, Voltage (V)
0.6
VBE(on) @ VCE = 10 V
0.4
1.0 V
+0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
VCE(sat) @ IC/IB = 10
– 2.5
R
q
VB for VBE
R
q
VC for VCE(sat)
0.2
0
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
I C, Collect Current (mA)
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
I C, Collect Current (mA)
500
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
4
of
6
MMDT2227
Elektronische Bauelemente
NPN-PNP Silicon
Multi-Chip Transistor
PNP2907
3.0
2.0
hFE , Normalized Current Gain
VCE = –1.0 V
VCE = –10 V
TYPICAL CHARACTERISTICS
TJ = 125°C
25°C
1.0
0.7
0.5
0.3
0.2
–0.1
– 55°C
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
I C, Collector Current (mA)
Figure
13.
DC Current Gain
–1.0
VCE , Collector–Emitter Voltage (V)
–0.8
IC = –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
I B, Base Current (mA)
–2.0
–3.0
–5.0 –7.0 –10
–20 –30
–50
Figure
14.
Collector Saturation Region
300
200
100
70
50
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
IC, Collector Current
tr
500
VCC = –30 V
IC/IB = 10
TJ = 25°C
t, Time (ns)
300
200
tf
100
70
50
30
20
2.0 V
–200 –300 –500
10
7.0
5.0
–5.0 –7.0 –10
t′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, Time (ns)
–20 –30
–50 –70 –100
I C, Collector Current (mA)
–200 –300 –500
Figure
15.
Turn–On Time
Figure
16.
Turn–Off Time
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Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
5
of
6
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