Preliminary
Data Sheet
NP75N04YUK
40 V – 75 A – N-channel Power MOS FET
Application: Automotive
Description
The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
R07DS1004EJ0100
Rev.1.00
Feb 08, 2013
Features
Super low on-state resistance
R
DS(on)
= 3.3 m MAX. (V
GS
= 10 V, I
D
= 38 A)
Non logic level drive type
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP75N04YUK-E1-AY
*
1
NP75N04YUK-E2-AY
*
Note:
1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Package
8-pin HSON
*1
Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings
(T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
*
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
*
2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
*
3
Repetitive Avalanche Energy
*
3
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AR
E
AR
Ratings
40
20
75
300
138
1.0
175
–55 to +175
35
123
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes:
*1
T
C
= 25°C, P
W
10
s,
Duty Cycle
1%
*2
Mounted on glass epoxy substrate of 40 mm
40 mm
1.6 mmt with 4% Copper area (35
m)
*3
R
G
= 25
,
V
GS
= 20 V
0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.09
150
°C/W
°C/W
R07DS1004EJ0100 Rev.1.00
Feb 08, 2013
Page 1 of 6
NP75N04YUK
Preliminary
Electrical Characteristics
(T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
*
1
Drain to Source On-state Resistance
*
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
*
1
Reverse Recovery Time
Reverse Recovery Charge
Note:
*1
Pulsed test
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
—
—
2.0
31
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TYP.
—
—
3.0
62
2.6
3400
480
180
24
10
60
7
58
16
15
0.9
42
51
MAX.
1
100
4.0
—
3.3
5100
720
330
48
25
120
17
87
—
—
1.5
—
—
Unit
A
nA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
A
V
DS
= 5 V, I
D
= 38 A
V
GS
= 10 V, I
D
= 38 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 20 V, I
D
= 38 A
V
GS
= 10 V
R
G
= 0
V
DD
= 32 V
V
GS
= 10 V
I
D
= 75 A
I
F
= 75 A, V
GS
= 0 V
I
F
= 75 A, V
GS
= 0 V
di/dt = 100 A/s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
Wave Form
V
GS
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
D
V
DD
I
AS
V
DS
V
GS
0
V
DS
Wave Form
V
DS
0
t
d(on)
t
on
τ
τ
= 1
μs
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS1004EJ0100 Rev.1.00
Feb 08, 2013
Page 2 of 6
NP75N04YUK
Preliminary
Typical Characteristics
(T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
dT - Percentage of Rated Power - %
120
P
T
- Total Power Disslpation - W
100
80
60
40
20
0
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(ON)
Limited
(V
GS
=10 V)
I
D(Pulse)
= 300 A
PW
I
D
- Drain Current - A
100
I
D(DC)
= 75A
=
10
0
μ
s
PW
=1
10
Power Dissipation Limited
ms
0m
PW
=1
1
Secondary Breakdown Limited
T
C
= 25°C
Single Pulse
s
DC
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
R
th(t)
- Transient Thermal Resistance - °C/W
R
th(ch-A)
= 150°C/W
100
10
R
th(ch-C)
= 1.09°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm
×
40 mm
×
1.6 mmt
with 4% copper area (35
μm)
1m
10 m
100 m
1
10
100
1000
0.01
100
μ
PW - Pulse Width - s
R07DS1004EJ0100 Rev.1.00
Feb 08, 2013
Page 3 of 6
NP75N04YUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
300
Preliminary
FORWARD TRANSFER CHARACTERISTICS
100
10
T
A
= –55°C
25°C
75°C
125°C
175°C
I
D
- Drain Current - A
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
V
GS
= 10 V
Pulsed
1.0
1.2
1.4
I
D
- Drain Curent - A
1
0.1
0.01
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
6
0.001
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
V
GS(th)
- Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
4
100
T
A
= –55°C
25°C
75°C
125°C
175°C
3
2
10
1
V
DS
= V
GS
I
D
= 250
μA
0
–100
–50
0
50
100
150
200
V
DS
= 5 V
Pulsed
1
0.1
1
10
100
T
ch
- Channel Temperature - °C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
6
5
4
3
2
1
0
V
GS
= 10 V
Pulsed
1
10
100
1000
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
5
4
3
2
1
0
I
D
= 38 A
Pulsed
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS1004EJ0100 Rev.1.00
Feb 08, 2013
Page 4 of 6
NP75N04YUK
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
–100
V
GS
= 10 V
I
D
= 38 A
Pulsed
–50
0
50
100
150
200
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance -pF
C
iss
1000
C
oss
V
GS
= 0 V
f = 1 MHz
100
0.1
1
10
C
rss
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
V
DD
= 32 V
20 V
8V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
30
25
20
15
10
5
0
0
10
12
10
8
V
GS
6
4
100
t
d(off)
t
d(on)
t
r
t
f
10
V
DS
20
30
40
I
D
= 75 A
50
2
0
60
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
V
GS
= 10 V
V
GS
= 0 V
10
10
1
Pulsed
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
di/dt = 100 A/μs
V
GS
= 0 V
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Drain Current - A
R07DS1004EJ0100 Rev.1.00
Feb 08, 2013
Page 5 of 6
V
GS
- Gate to Source Voltage - V
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
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