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VT1080S-E3

Description
Trench MOS Barrier Schottky Rectifier
File Size155KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VT1080S-E3 Overview

Trench MOS Barrier Schottky Rectifier

VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.52 V at I
F
= 5 A
FEATURES
Trench MOS Barrier Schottky Rectifier
TMBS
TO-220AB
®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
1
VT1080S
PIN 1
PIN 2
CASE
3
1
VFT1080S
PIN 1
PIN 2
2
3
PIN 3
PIN 3
TYPICAL APPLICATIONS
TO-262AA
TO-263AB
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
A
NC
1
VBT1080S
NC
A
K
HEATSINK
2
3
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
VIT1080S
PIN 1
PIN 2
K
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
Package
Diode variations
10 A
80 V
100 A
0.60 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single die
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C
Isolation voltage (ITO-220AB only)from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 05-Nov-13
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
V
AC
T
J
, T
STG
VT1080S
VFT1080S VBT1080S
80
10
100
110
1.0
1500
-55 to +150
VIT1080S
UNIT
V
A
A
mJ
A
V
°C
Document Number: 89165
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VT1080S-E3 Related Products

VT1080S-E3 VBT1080S-E3 VFT1080S-E3 VIT1080S-E3
Description Trench MOS Barrier Schottky Rectifier Trench MOS Barrier Schottky Rectifier Trench MOS Barrier Schottky Rectifier Trench MOS Barrier Schottky Rectifier

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