256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | TSOP |
package instruction | TSOP1, TSSOP32,.8,20 |
Contacts | 32 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum access time | 70 ns |
Other features | 10K WRITE/ERASE CYCLES MIN |
command user interface | YES |
Data polling | NO |
Durability | 10000 Write/Erase Cycles |
JESD-30 code | R-PDSO-G32 |
JESD-609 code | e0 |
length | 18.4 mm |
memory density | 262144 bi |
Memory IC Type | FLASH |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 32768 words |
character code | 32000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 32KX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSOP1 |
Encapsulate equivalent code | TSSOP32,.8,20 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Programming voltage | 12 V |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum standby current | 0.0001 A |
Maximum slew rate | 0.03 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 0.5 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
switch bit | NO |
type | NOR TYPE |
width | 8 mm |
Base Number Matches | 1 |