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M36W0R7050T0ZAQ

Description
Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
Categorystorage    storage   
File Size360KB,18 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M36W0R7050T0ZAQ Overview

Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88

M36W0R7050T0ZAQ Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA,
Contacts88
Reach Compliance Codeunknown
Other featuresPSRAM IS ORGANIZED AS 2M X 16
JESD-30 codeR-PBGA-B88
JESD-609 codee0
length10 mm
memory density134217728 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals88
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
M36W0R7050T0
M36W0R7050B0
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and
32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE
– 1 die of 128 Mbit (8Mb x16, Multiple Bank,
Burst) Flash Memory
– 1 die of 32 Mbit (2Mb x16) Pseudo SRAM
SUPPLY VOLTAGE
– V
DDF
= V
DDP
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 12V for Fast Program (optional)
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration)
M36W0R7050T0: 881Eh
– Device Code (Bottom Flash
Configuration) M36W0R7050B0: 881Fh
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
FLASH MEMORY
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
MEMORY ORGANIZATION
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Figure 1. Package
FBGA
TFBGA88 (ZAQ)
8 x 10mm
SECURITY
– 64 bit unique device number
– 128 bit user programmable OTP Cells
BLOCK LOCKING
– All blocks locked at power-up
– Any combination of blocks can be locked
– WP
F
for Block Lock-Down
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
ACCESS TIME: 85ns
LOW STANDBY CURRENT: 100µA
DEEP POWER-DOWN CURRENT: 10µA
BYTE CONTROL: UB
P
/LB
P
PROGRAMMABLE PARTIAL ARRAY
8 WORD PAGE ACCESS CAPABILITY: 25ns
PARTIAL POWER-DOWN MODES
– Deep Power-Down
– 4 Mbit Partial Power-Down
– 8 Mbit Partial Power-Down
– 16 Mbit Partial Power-Down
December 2004
1/18

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