EEWORLDEEWORLDEEWORLD

Part Number

Search

IPD60R460CE

Description
MOSFETs;13.1A;600V;DPAK/TO-252
File Size242KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

IPD60R460CE Online Shopping

Suppliers Part Number Price MOQ In stock  
IPD60R460CE - - View Buy Now

IPD60R460CE Overview

MOSFETs;13.1A;600V;DPAK/TO-252

IPD60R460CE Preview

isc N-Channel MOSFET Transistor
·FEATURES
·Static
drain-source on-resistance:
R
DS
(on)≤0.46Ω
·Enhancement
mode:
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast
switching
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
600
±20
13.1
26
102
150
-40~150
IPD60R460CE,IIPD60R460CE
UNIT
V
V
A
A
W
·THERMAL
CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
MAX
1.22
62
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
BV
DSS
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
IPD60R460CE,IIPD60R460CE
CONDITIONS
V
GS
=0V; I
D
=0.25mA
MIN
600
2.5
TYP
MAX
UNIT
V
V
GS
(th
)
V
DS
=V
GS
; I
D
=0.28mA
V
GS
=10V; I
D
=3.4A
3.5
V
R
DS(
on
)
Drain-Source On-Resistance
0.46
Ω
I
GSS
I
DSS
V
SD
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
V
GS
=20V; V
DS
=0V
V
DS
=600V; V
GS
= 0V
I
F
=4.2A, V
GS
= 0V
0.9
0.1
1
μA
μA
V
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website:www.iscsemi.cn
2
isc & iscsemi is registered trademark

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号