LTC4440-5
High Speed, High Voltage,
High Side Gate Driver
FeaTures
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DescripTion
The
LTC
®
4440-5
is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in appli-
cations with V
IN
voltages up to 60V. The LTC4440-5 can
also withstand and continue to function during 80V V
IN
transients. The powerful driver capability reduces switch-
ing losses in MOSFETs with high gate capacitances. The
LTC4440-5’s pull-up has a peak output current of 1.1A and
its pull-down has an output impedance of 1.85Ω.
The LTC4440-5 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 95V
above ground.
The LTC4440-5 is optimized for driving (5V) logic level
FETs and contains an undervoltage lockout circuit that
disables the external MOSFET when activated.
The LTC4440-5 is available in the low profile (1mm)
SOT-23 or a thermally enhanced 8-lead MSOP package.
PARAMETER
Max Operating TS
Absolute Max TS
MOSFET Gate Drive
V
CC
UV
+
V
CC
UV
–
LTC4440-5
60V
80V
4V to 15V
3.2V
3.04V
LTC4440A-5
80V
100V
4V to 15V
3.2V
3.04V
LTC4440
80V
100V
8V to 15V
6.3V
6.0V
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Wide Operating V
IN
Range: Up to 60V
Rugged Architecture Tolerant of 80V V
IN
Transients
Powerful 1.85Ω Driver Pull-Down (with 6V Supply)
Powerful 1.1A Peak Current Driver Pull-Up
(with 6V Supply)
7ns Fall Time Driving 1000pF Load
10ns Rise Time Driving 1000pF Load
Drives Standard Threshold MOSFETs
TTL/CMOS Compatible Inputs with Hysteresis
Input Thresholds are Independent of Supply
Undervoltage Lockout
Low Profile (1mm) SOT-23 (ThinSOT™) and
Thermally Enhanced 8-Pin MSOP Packages
applicaTions
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Telecommunications Power Systems
Distributed Power Architectures
Server Power Supplies
High Density Power Modules
General Purpose Low-Side Driver
L,
LT, LTC, LTM, Linear Technology, the Linear logo and PolyPhase are registered trademarks
and ThinSOT is a trademark of Linear Technology Corporation. All other trademarks are the
property of their respective owners. Protected by U.S. Patents, including 6677210.
Typical applicaTion
Synchronous Phase-Modulated Full-Bridge Converter
V
IN
36V TO 60V
V
CC
4V TO 15V
LTC4440-5
V
CC
BOOST
INP
GND
TG
TS
INP
2V/DIV
TG-TS
2V/DIV
LTC4440-5 Driving a 1000pF Capacitive Load
LTC4440-5
LTC3722-1
V
CC
BOOST
INP
GND
TG
TS
4440 TA01
•
•
50ns/DIV
V
CC
= BOOST-TS = 5V
4440-5 TA02
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1
LTC4440-5
absoluTe MaxiMuM raTings
(Note 1)
Supply Voltage
V
CC
........................................................ –0.3V to 15V
BOOST – TS ........................................... –0.3V to 15V
INP Voltage ................................................ –0.3V to 15V
BOOST Voltage (Continuous) ..................... –0.3V to 85V
BOOST Voltage (100ms) ............................ –0.3V to 95V
TS Voltage (Continuous) ............................... –5V to 70V
TS Voltage (100ms) ...................................... –5V to 80V
Peak Output Current < 1µs (TG) ..................................4A
Operating Ambient Temperature Range
(Note 2) ...............................................–40°C to 85°C
Junction Temperature (Note 3) ............................. 125°C
Storage Temperature Range .................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec)................... 300°C
pin conFiguraTion
TOP VIEW
INP
GND
V
CC
GND
1
2
3
4
9
8
7
6
5
TS
TG
BOOST
NC
V
CC
1
GND 2
INP 3
TOP VIEW
6 BOOST
5 TG
4 TS
MS8E PACKAGE
8-LEAD PLASTIC MSOP
T
JMAX
= 125°C,
θ
JA
= 40°C/W
EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB
S6 PACKAGE
6-LEAD PLASTIC SOT-23
T
JMAX
= 125°C,
θ
JA
= 230°C/W
orDer inForMaTion
LEAD FREE FINISH
LTC4440EMS8E-5#PBF
LTC4440ES6-5#PBF
TAPE AND REEL
LTC4440ES6-5#TRPBF
PART MARKING
LTBRF
PACKAGE DESCRIPTION
8-Lead Plastic MSOP
6-Lead Plastic SOT-23
TEMPERATURE RANGE
–40°C to 85°C
–40°C to 85°C
LTC4440EMS8E-5#TRPBF LTBRG
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/
elecTrical characTerisTics
SYMBOL PARAMETER
Main Supply (V
CC
)
I
VCC
UVLO
DC Supply Current
Normal Operation
UVLO
Undervoltage Lockout Threshold
CONDITIONS
The
●
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= V
BOOST
= 6V, V
TS
= GND = 0V, unless otherwise noted.
MIN
TYP
MAX
UNITS
INP = 0V
V
CC
< UVLO Threshold (Falling) – 0.1V
V
CC
Rising
V
CC
Falling
Hysteresis
l
l
200
18
2.75
2.60
3.20
3.04
160
325
40
3.65
3.50
µA
µA
V
V
mV
Bootstrapped Supply (BOOST – TS)
I
BOOST
DC Supply Current
Normal Operation
INP = 0V
INP = 6V
0
310
µA
µA
450
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For more information
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LTC4440-5
elecTrical characTerisTics
SYMBOL PARAMETER
Input Signal (INP)
V
IH
V
IL
V
IH
– V
IL
I
INP
V
OH
V
OL
I
PU
R
DS
t
r
t
f
t
PLH
t
PHL
High Input Threshold
Low Input Threshold
Input Voltage Hysteresis
Input Pin Bias Current
High Output Voltage
Low Output Voltage
Peak Pull-Up Current
Output Pull-Down Resistance
Output Rise Time
Output Fall Time
Output Low-High Propagation Delay
Output High-Low Propagation Delay
10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
l
l
The
●
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= V
BOOST
= 6V, V
TS
= GND = 0V, unless otherwise noted.
CONDITIONS
INP Ramping High
INP Ramping Low
l
l
MIN
1.2
0.8
TYP
1.6
1.25
0.350
±0.01
MAX
2
1.6
±2
UNITS
V
V
V
µA
V
Output Gate Driver (TG)
I
TG
= –10mA, V
OH
= V
BOOST
– V
TG
I
TG
= 100mA
l
l
l
0.7
185
0.75
1.1
1.85
10
100
7
70
35
33
65
65
2.75
275
mV
A
Ω
ns
ns
ns
ns
ns
ns
Switching Timing
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
The LTC4440-5 is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3:
T
J
is calculated from the ambient temperature T
A
and power
dissipation PD according to the following formula:
T
J
= T
A
+ (PD •
θ
JA
°C/W)
Note 4:
Failure to solder the exposed back side of the MS8E package to the
PC board will result in a thermal resistance much higher than 40°C/W.
Typical perForMance characTerisTics
V
CC
Supply Quiescent Current
vs Voltage
350
300
QUIESCENT CURRENT (µA)
QUIESCENT CURRENT (µA)
250
200
150
100
50
0
0
10
5
V
CC
SUPPLY VOLTAGE (V)
15
4440-5 G01
BOOST-TS Supply Quiescent
Current vs Voltage
400
350
300
250
200
150
100
50
0
0
5
10
15
4440-5 G02
Output Low Voltage (V
OL
)
vs Supply Voltage
300
OUTPUT (TG-TS) VOLTAGE (mV)
250
200
150
100
50
0
INP = V
CC
INP = GND
INP = V
CC
3
4
BOOST-TS SUPPLY VOLTAGE (V)
5 6 7 8 9 10 11 12 13 14 15
BOOST-TS SUPPLY VOLTAGE (V)
4440-5 G03
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3
LTC4440-5
Typical perForMance characTerisTics
Output High Voltage (V
OH
)
vs Supply Voltage
16
14
HIGH OUTPUT VOLTAGE (V)
INPUT THRESHOLD (V)
12
10
8
6
4
2
0
4
5
6 7 8 9 10 11 12 13 14 15
BOOST-TS SUPPLY VOLTAGE (V)
4440-5 G04
Input (INP) Thresholds
vs Supply Voltage
2.0
1.8
1.6
V
IH
V
IL
OUTPUT
(TG)
5V/DIV
INPUT
(INP)
5V/DIV
2MHz Operation
I
TG
= 1mA
I
TG
= 10mA
I
TG
= 100mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
4
5
6
250ns/DIV
V
CC
= BOOST-TS = 12V
7 8 9 10 11 12 13 14 15
V
CC
SUPPLY VOLTAGE (V)
4440-5 G05
4440-5 G07
V
CC
Supply Current
vs Temperature
250
UVLO THRESHOLD VOLTAGE (V)
200
INP = GND
3.5
3.4
V
CC
Undervoltage Lockout
Thresholds vs Temperature
400
350
RISING
FALLING
QUIESCENT CURRENT (µA)
300
250
200
150
100
50
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G09
BOOST-TS Quiescent Current
vs Temperature
QUIESCENT CURRENT (µA)
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
150
INP = V
CC
100
50
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G08
2.5
–55 –35 –15
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G10
Input (INP) Threshold
vs Temperature
2.0
1.8
HYSTERESIS (V
IH
-V
IL
) (mV)
INPUT THRESHOLD (V)
1.6
1.4
V
IL
1.2
1.0
0.8
–55 –35 –15
V
IH
380
370
360
Input Threshold Hysteresis
vs Temperature
3.5
3.0
PEAK CURRENT (A)
2.5
2.0
1.5
1.0
0.5
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G12
Peak Driver (TG) Pull-Up Current
vs Temperature
BOOST-TS = 15V
BOOST-TS = 12V
350
340
330
320
310
BOOST-TS = 6V
BOOST-TS = 4V
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G11
300
–55 –35 –15
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G13
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LTC4440-5
Typical perForMance characTerisTics
Output Driver Pull-Down
Resistance vs Temperature
3.0
2.5
2.0
R
DS
( )
1.5
1.0
0.5
0
–55 –35 –15
50
45
PROPAGATION DELAY (ns)
40
35
30
25
20
–55 –35 –15
t
PLH
t
PHL
Propagation Delay vs Temperature
V
CC
= BOOST = 6V
BOOST-TS = 4V
BOOST-TS = 6V
BOOST-TS = 15V
BOOST-TS = 12V
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G14
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G15
Driving a 3300pF Capacitive Load
Driving a 3300pF Capacitive Load
TG-TS
2V/DIV
TG-TS
5V/DIV
INP
2V/DIV
50ns/DIV
V
CC
= BOOST-TS = 5V
4440-5 G16
INP
2V/DIV
50ns/DIV
V
CC
= BOOST-TS = 12V
4440-5 G17
pin FuncTions
SOT-23 Package
V
CC
(Pin 1):
Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
GND (Pin 2):
Chip Ground.
INP (Pin 3):
Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
TS (Pin 4):
Top (High Side) source connection or GND if
used in ground referenced applications.
TG (Pin 5):
High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
BOOST (Pin 6):
High Side Bootstrapped Supply. An ex-
ternal capacitor should be tied between this pin and TS
(Pin 4). Normally, a bootstrap diode is connected between
V
CC
(Pin 1) and this pin. Voltage swing at this pin is from
V
CC
– V
D
to V
IN
+ V
CC
– V
D
, where V
D
is the forward volt-
age drop of the bootstrap diode.
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