PYA28C16B
2K X 8 EEPROM
FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Byte Write Cycle Time - 10 ms Maximum
Low Power CMOS:
- 60 mA Active Current
- 150 µA Standby Current
Fast Write Cycle Time -
DATA
Polling
CMOS & TTL Compatible Inputs and Outputs
Endurance:
- 10,000 Write Cycles
- 100,000 Write Cycles (optional)
Data Retention: 10 Years
Available in the following package:
– 24-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28C16B is a 5 Volt 2Kx8 EEPROM. The PY-
A28C16B is a 16K memory organized as 2,048 words by
8 bits. Data Retention is 10 Years. The device is available
in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC.
PIN CONFIGURATIONS
DIP (C12)
FUNCTIONAL BLOCK DIAGRAM
LCC (L6)
Document #
EEPROM109
REV OR
Revised October 2012
PYA28C16B - 2K x 8 EEPROM
OPERATION
READ
Read operations are initiated by both
OE
and
CE
LOW.
The read operation is terminated by either
CE
or
OE
re-
turning HIGH. This two line control architecture elimi-
nates bus contention in a system environment. The data
bus will be in a high impedance state when either
OE
or
CE
is HIGH.
BYTE WRITE
Write operations are initiated when both
CE
and
WE
are
LOW and
OE
is HIGH. The PYA28C16B supports both a
CE
and
WE
controlled write cycle. That is, the address is
latched by the falling edge of either
CE
or
WE,
whichever
occurs last. Similarly, the data is latched internally by the
rising edge of either
CE
or
WE,
whichever occurs first. A
byte write operation, once initiated, will automatically con-
tinue to completion.
CHIP CLEAR
The contents of the entire memory of the PYA28C16B
may be set to the high state by the CHIP CLEAR opera-
tion. By setting
CE
low and
OE
to 12 volts, the chip is
cleared when a 10 msec low pulse is applied to
WE.
DEVICE IDENTIFICATION
An extra 32 bytes of EEPROM memory are available to
the user for device identification. By raising A
9
to 12 ±
0.5V and using address locations 7E0H to 7FFH the ad-
ditional bytes may be written to or read from in the same
manner as the regular memory array.
DATA
POLLING
The PYA28C16B features
DATA
Polling as a method to
indicate to the host system that the byte write cycle has
completed.
DATA
Polling allows a simple bit test opera-
tion to determine the status of the PYA28C16B, eliminat-
ing additional interrupts or external hardware. During the
internal programming cycle, any attempt to read the last
byte written will produce the complement of that data on
I/O
7
(i.e., write data=0xxx xxxx, read data=1xxx xxxx).
Once the programming cycle is complete, I/O
7
will reflect
true data.
MAXIMUM RATINGS
(1)
Sym
V
CC
V
TERM
T
A
T
BIAS
T
STG
P
T
I
OUT
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND (up to
6.25V)
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
-0.3 to +6.25
-0.5 to +6.25
-55 to +125
-55 to +125
-65 to +150
1.0
50
Unit
V
V
°C
°C
°C
W
mA
RECOMMENDED OPERATING CONDITIONS
Grade
(2)
Military
Ambient Temp
-55°C to +125°C
GND
0V
V
CC
5.0V ± 10%
CAPACITANCES
(4)
Sym
C
IN
C
OUT
Parameter
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ
10
10
Unit
pF
pF
Input Capacitance
Output Capacitance
Document #
EEPROM109
REV OR
Page 2
PYA28C16B - 2K x 8 EEPROM
DC ELECTRICAL CHARACTERISTICS
Sym Parameter
V
IH
V
IL
V
HC
V
LC
V
OL
V
OH
I
LI
I
LO
I
SB
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Output Low Voltage (TTL Load)
Output High Voltage (TTL Load)
Input Leakage Current
Output Leakage Current
(Over Recommended Operating Temperature & Supply Voltage)
(2)
Test Conditions
PYA28C16B
Min
2.0
-0.5
(3)
V
CC
- 0.2
-0.5
(3)
I
OL
= +2.1 mA, V
CC
= Min
I
OH
= -0.4 mA, V
CC
= Min
V
CC
= Max
V
IN
= GND to V
CC
V
CC
= Max,
CE
= V
IH
,
V
OUT
= GND to V
CC
CE
≥ V
IH
,
OE
= V
IL
,
Standby Power Supply Current (TTL Input Levels)
V
CC
= Max,
f = Max, Outputs Open
CE
≥ V
HC
,
I
SB1
Standby Power Supply Current (CMOS Input Levels)
V
CC
= Max,
f = 0, Outputs Open,
V
IN
≤ V
LC
or V
IN
≥ V
HC
CE
=
OE
= V
IL
,
I
CC
Supply Current
WE
= V
IH
,
All I/O's = Open,
Inputs = V
CC
= 5.5V
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL
and I
IL
not more negative than -3.0V and -100mA,
respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
—
—
—
Max
V
CC
+ 0.3
0.8
V
CC
+ 0.5
0.2
0.45
Unit
V
V
V
V
V
V
2.4
-10
-10
+10
+10
µA
µA
5
mA
150
µA
60
mA
Document #
EEPROM109
REV OR
Page 3
PYA28C16B - 2K x 8 EEPROM
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
AVAV
t
AVQV
t
ELQV
t
OLQV
t
ELQX
t
EHQZ
t
OLQX
t
OHQZ
t
AVQX
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Chip Disable to to Output in High Z
Output Enable to Output in Low Z
Output Disable to Output in High Z
Output Hold from Address Change
0
0
55
0
0
55
0
60
0
-150
Min
150
150
150
80
0
60
0
65
0
Max
Min
200
200
200
100
0
65
0
70
-200
Max
Min
250
250
250
100
0
70
-250
Max
Min
350
350
350
100
-350
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF READ CYCLE
Document #
EEPROM109
REV OR
Page 4
PYA28C16B - 2K x 8 EEPROM
AC CHARACTERISTICS—WRITE CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Symbol
t
ELRH
t
WLRH
t
AVEL
t
AVWL
t
ELAX
t
WLAX
t
WLEL
t
WHEH
t
OHEL
t
OHWL
t
WHOL
t
EHOL2
t
ELEH
t
WLWH
t
DVEH
t
DVWH
t
EHDX
t
WHDX
t
ELWL
t
EHWH
t
EHRL
t
WHRL
Parameter
Write Cycle Time
Address Setup Time
Address Hold Time
Write Setup Time
Write Hold Time
OE
Setup Time
OE
Hold Time
WE
Pulse Width
Data Setup Time
Data Hold Time
CE
Setup Time
CE
Hold Time
Time to device busy
10
50
0
0
10
10
100
50
10
0
0
50
1000
150 / 200 / 250 / 350
Min
Max
10
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Document #
EEPROM109
REV OR
Page 5
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