PD- 95189
IRG4PH50KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• High short circuit rating optimized for motor control,
t
sc
=10µs, V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
• Lead-Free
Features
Short Circuit Rated
UltraFast IGBT
C
V
CES
= 1200V
G
E
V
CE(on) typ.
=
2.77V
@V
GE
= 15V, I
C
= 24A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH50KD2 and IRGPH50MD2
products
• For hints see design tip 97003
TO-247AC
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
45
24
90
90
16
90
10
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
04/26/04
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1
IRG4PH50KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown VoltageS 1200 —
Temperature Coeff. of Breakdown Voltage — 0.91
Collector-to-Emitter Saturation Voltage
— 2.77
— 3.28
— 2.54
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-10
Forward Transconductance
T
13
19
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
2.5
—
2.1
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
— V/°C V
GE
= 0V, I
C
= 1.0mA
3.5
I
C
= 24A
V
GE
= 15V
—
V
I
C
= 45A
See Fig. 2, 5
—
I
C
= 24A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
= 24A
250
µA
V
GE
= 0V, V
CE
= 1200V
6500
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
3.5
V
I
C
= 16A
See Fig. 13
3.0
I
C
= 16A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
180
25
70
87
100
140
200
3.83
1.90
5.73
—
67
72
310
390
8.36
13
2800
140
53
90
164
5.8
8.3
260
680
120
76
Max. Units
Conditions
270
I
C
= 24A
38
nC V
CC
= 400V
See Fig.8
110
V
GE
= 15V
—
—
T
J
= 25°C
ns
300
I
C
= 24A, V
CC
= 800V
300
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
7.9
See Fig. 9,10,18
—
µs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0Ω
—
T
J
= 150°C,
See Fig. 10,11,18
—
I
C
= 24A, V
CC
= 800V
ns
—
V
GE
= 15V, R
G
= 5.0Ω,
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
135
ns
T
J
= 25°C See Fig.
245
T
J
= 125°C
14
I
F
= 16A
10
A
T
J
= 25°C See Fig.
15
T
J
= 125°C
15
V
R
= 200V
675
nC T
J
= 25°C See Fig.
1838
T
J
= 125°C
16
di/dt = 200A/µs
—
A/µs T
J
= 25°C See Fig.
—
T
J
= 125°C
17
2
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IRG4PH50KDPbF
30
F o r b o th :
25
LOAD CURRENT (A)
20
S q u a re w a v e :
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T sink = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
40
W
6 0% of rate d
volta ge
I
15
10
5
Id e a l d io d e s
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
°
C
10
T = 150
°
C
J
10
T
J
= 25
°
C
T
J
= 25
°
C
1
V
= 15V
20µs PULSE WIDTH
GE
1
10
1
V
= 50V
5µs PULSE WIDTH
CC
5
6
7
8
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH50KDPbF
50
4.0
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
40
3.5
I
C
= 48A
30
3.0
I
C
= 24A
2.5
20
I
C
= 12A
2.0
10
0
25
50
75
100
125
150
1.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.001
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH50KDPbF
4000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
3000
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 24A
16
C
ies
12
2000
8
1000
4
0
C
oes
C
res
1
10
100
0
V
CE
, Collector-to-Emitter Voltage (V)
0
40
80
120
160
200
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
7.0
Total Switching Losses (mJ)
6.6
Total Switching Losses (mJ)
V
CC
=
800V
960V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 24A
100
5.0Ω
R
G
= Ohm
V
GE
= 15V
800V
V
CC
= 960V
I
C
=
48
A
10
6.2
I
C
=
24
A
I
C
=
12
A
5.8
5.4
0
10
20
30
40
50
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
R
G
, Gate Resistance (
Ω )
, Gate Resistance (Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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