Silicon Controlled Rectifier, 355 A, 200 V, SCR
Parameter Name | Attribute value |
Maker | IXYS |
package instruction | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | HIGH RELIABILITY |
Nominal circuit commutation break time | 25 µs |
Configuration | SINGLE |
Critical rise rate of minimum off-state voltage | 200 V/us |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 600 mA |
JESD-30 code | O-MUPM-H3 |
Maximum leakage current | 30 mA |
On-state non-repetitive peak current | 5200 A |
Number of components | 1 |
Number of terminals | 3 |
Maximum on-state current | 195000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -30 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Maximum rms on-state current | 355 A |
Maximum repetitive peak off-state leakage current | 30000 µA |
Off-state repetitive peak voltage | 200 V |
Repeated peak reverse voltage | 200 V |
surface mount | NO |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |
Trigger device type | SCR |