TO
-2
20A
C
BYC10D-600
Hyperfast power diode
Rev. 1 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
Low reverse recovery current and low
thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
93 °C; see
Figure 1;
see
Figure 2
I
F
= 10 A; T
j
= 25 °C;
see
Figure 5
I
F
= 10 A; T
j
= 150 °C;
see
Figure 5
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 10 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 25 °C;
see
Figure 6
-
18
-
ns
Conditions
Min
-
-
Typ
-
-
Max Unit
600
10
V
A
Static characteristics
V
F
forward voltage
-
-
2
1.4
2.5
1.8
V
V
NXP Semiconductors
BYC10D-600
Hyperfast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; connected to cathode
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD59 (TO-220AC)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYC10D-600
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
93 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
93 °C
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
600
600
500
10
20
71
65
150
150
Unit
V
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
non-repetitive peak forward current t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C;
see
Figure 3
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C;
see
Figure 3
T
stg
T
j
storage temperature
junction temperature
BYC10D-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 June 2011
2 of 11
NXP Semiconductors
BYC10D-600
Hyperfast power diode
30
P
tot
(W)
20
0.2
0.1
003aag301
δ=1
0.5
25
P
tot
(W)
20
4.0
15
1.9
003aag302
a = 1.57
2.2
2.8
10
10
5
0
0
5
10
I
F(AV)
(A)
15
0
0
2
4
6
8
10
I
F(AV)
(A)
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aag303
10
3
I
FSM
(A)
10
2
P
10
1
t
p
t
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig 3.
Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYC10D-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 June 2011
3 of 11
NXP Semiconductors
BYC10D-600
Hyperfast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient free air
Conditions
see
Figure 4
in free air
Min
-
-
Typ
-
60
Max
2.5
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYC10D-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 June 2011
4 of 11
NXP Semiconductors
BYC10D-600
Hyperfast power diode
6. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 20 A; T
j
= 150 °C; see
Figure 5
I
F
= 10 A; T
j
= 25 °C; see
Figure 5
I
F
= 10 A; T
j
= 150 °C; see
Figure 5
I
R
reverse current
V
R
= 600 V
V
R
= 500 V; T
j
= 100 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C; see
Figure 6
I
F
= 10 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C; see
Figure 6
I
RM
peak reverse recovery
current
I
F
= 10 A; V
R
= 400 V; dI
F
/dt = 50 A/µs;
T
j
= 125 °C; see
Figure 6
I
F
= 10 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C; see
Figure 6
V
FR
forward recovery voltage
I
F
= 10 A; dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 7
-
-
-
-
-
15
18
3
9.5
8
30
-
7.5
12
11
ns
ns
A
A
V
Min
-
-
-
-
-
Typ
1.7
2
1.4
9
1.1
Max
2.2
2.5
1.8
200
3
Unit
V
V
V
µA
mA
Static characteristics
20
I
F
(A)
16
003aag300
I
F
dl
F
dt
t
rr
12
time
(1)
(2)
(3)
8
25 %
Q
r
100 %
4
I
R
0
0
1
2
3
I
RM
003aac562
V
F
(V)
Fig 5.
Forward current as a function of forward
voltage
Fig 6.
Reverse recovery definitions; ramp recovery
BYC10D-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 June 2011
5 of 11
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