DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBD7100
High-speed double diode
Product data sheet
2003 Nov 07
NXP Semiconductors
Product data sheet
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage: max. 100 V
•
Repetitive peak reverse voltage: max. 100 V
•
Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•
High-speed switching in thick and thin-film circuits.
DESCRIPTION
The PMBD7100 consists of two high-speed switching
diodes with common cathodes, fabricated in planar
technology, and encapsulated in the small SOT23 SMD
plastic package.
MARKING
Top view
1
2
MAM383
PMBD7100
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common connection
handbook, halfpage
3
3
1
2
TYPE NUMBER
PMBD7100
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
MARKING CODE
(1)
*3A
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
TYPE NUMBER
NAME
PMBD7100
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2003 Nov 07
2
NXP Semiconductors
Product data sheet
High-speed double diode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to surge;
see Fig.4
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
single diode loaded; see Fig.2; note 1
double diode loaded; see Fig.2; note 1
−
−
−
−
−
PARAMETER
CONDITIONS
PMBD7100
MIN.
MAX.
UNIT
100
100
215
125
450
V
V
mA
mA
mA
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
2003 Nov 07
3
NXP Semiconductors
Product data sheet
High-speed double diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 100 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 100 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
V
R
= 0 V; f = 1 MHz; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to t
r
= 20 nA;
see Fig.8
PARAMETER
CONDITIONS
PMBD7100
MAX.
UNIT
715
855
1
1.25
30
2.5
60
100
1.5
4
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
fr
forward recovery voltage
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2003 Nov 07
4
NXP Semiconductors
Product data sheet
High-speed double diode
GRAPHICAL DATA
PMBD7100
300
IF
(mA)
200
MBD033
handbook, halfpage
I
300
MDB820
F
(mA)
250
single diode loaded
200
150
double diode loaded
100
100
(1)
(2)
(3)
50
0
0
100
T amb ( C)
o
200
0
0
0.5
1.0
1.5 V (V) 2.0
F
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Nov 07
5
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