JMnic
Product Specification
Silicon PNP Power Transistors
2SB1192
DESCRIPTION
・With
TO-220Fa package
・High
V
CEO
・Large
P
C
・Complement
to type 2SD1770
APPLICATIONS
・Power
amplifier
・TV
vertical deflection output
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-200
-150
-6
-1
-2
2
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1192
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-5mA ,
B
=0
-150
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=-0.5mA ,I
C
=0
I
C
=-500mA; I
B
=-50mA
-6
V
Collector-emitter saturation voltage
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-300mA ; V
CE
=-10V
-1.0
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-200V; I
E
=0
-50
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-50
h
FE-1
DC current gain
I
C
=-100mA ; V
CE
=-10V
60
240
h
FE-2
C
OB
DC current gain
I
C
=-300mA ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V,f=1MHz
50
Output capacitance
35
pF
f
T
Transition frequency
I
C
=-100mA ; V
CE
=-10V
20
MHz
h
FE-1
Classifications
Q
60-140
P
100-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1192
Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm)
3
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