DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ67W
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability
•
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
up to T
s
= 118
°C;
note 1
I
C
= 15 mA; V
CE
= 5 V; T
j
= 25
°C
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
I
c
= 15 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
c
= 5 mA; V
CE
= 8 V; f = 1 GHz
open base
CONDITIONS
open emitter
MIN.
−
−
−
−
60
−
−
−
TYP.
−
−
−
−
100
8
13
1.3
1
2
3
PINNING
PIN
DESCRIPTION
Code: V2
base
emitter
collector
handbook, 2 columns
BFQ67W
3
1
Top view
2
MBC870
Fig.1 SOT323.
MAX.
20
10
50
300
−
−
−
−
UNIT
V
V
mA
mW
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
September 1995
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 118
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
2.5
50
300
150
175
V
V
V
mA
mW
°C
°C
UNIT
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C,
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 15 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz
T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz
I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz; Z
s
= 60
Ω
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
f = 2 GHz
I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz; Z
s
= 60
Ω
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
BFQ67W
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 118
°C;
note 1
THERMAL RESISTANCE
190 K/W
MIN.
−
60
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
−
100
0.7
1.3
0.5
8
13
8
1.3
2
2.2
2.5
2.7
3
MAX.
50
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
September 1995
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
MRC045- 1
400
handbook, halfpage
Ptot
(mW)
300
MBB301
handbook, halfpage
120
h FE
80
200
40
100
0
0
50
100
150
Ts (
o
C)
200
0
0
20
40
I C (mA)
60
V
CE
= 5 V; T
j
= 25
°C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
0.8
MRC039
handbook, halfpage
10
MBB303
Cre
(pF)
0.6
fT
(GHz)
8
6
0.4
4
0.2
2
0
0
0
4
8
VCB (V)
12
0
10
20
30
I C (mA)
V
CE
= 8 V; f = 2 GHz; T
amb
= 25
°C.
40
I
C
= 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
In Figs 6 to 9, G
UM
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available
gain.
BFQ67W
MRC042
handbook,
20
halfpage
MRC040
gain
(dB)
15
MSG
G max
G UM
50
handbook, halfpage
gain
(dB)
40
G UM
30
10
MSG
20
5
10
0
G max
0
5
10
15
20
25
30
35
I C (mA)
0
10
−2
10
−1
1
f (GHz)
10
V
CE
= 8 V; f = 1 GHz; T
amb
= 25
°C.
I
C
= 5 mA; V
CE
= 8 V; T
amb
= 25
°C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of frequency.
handbook, halfpage
50
gain
(dB)
40
MRC041
handbook, halfpage
50
MRC043
G UM
gain
(dB)
40
G UM
30
MSG
20
G max
10
30
MSG
20
10
G max
0
10
−2
10
−1
1
f (GHz)
10
0
10
−2
10
−1
1
f (GHz)
10
I
C
= 15 mA; V
CE
= 8 V; T
amb
= 25
°C.
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
September 1995
5
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