Fast Page DRAM Module, 1MX9, 60ns, CMOS, SIMM-30
Parameter Name | Attribute value |
Maker | Infineon |
Parts packaging code | SIMM |
package instruction | SIMM, SIM30 |
Contacts | 30 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FAST PAGE |
Maximum access time | 60 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT |
I/O type | COMMON |
JESD-30 code | R-XSMA-N30 |
memory density | 9437184 bit |
Memory IC Type | FAST PAGE DRAM MODULE |
memory width | 9 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 30 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX9 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | SIMM |
Encapsulate equivalent code | SIM30 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 512 |
Maximum seat height | 20.447 mm |
Maximum standby current | 0.009 A |
Maximum slew rate | 0.81 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 2.54 mm |
Terminal location | SINGLE |
HYM91000S-60 | HYM91000S-80 | HYM91000S-70 | |
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Description | Fast Page DRAM Module, 1MX9, 60ns, CMOS, SIMM-30 | Fast Page DRAM Module, 1MX9, 80ns, CMOS, SIMM-30 | Fast Page DRAM Module, 1MX9, 70ns, CMOS, SIMM-30 |
Parts packaging code | SIMM | SIMM | SIMM |
package instruction | SIMM, SIM30 | SIMM, SIM30 | SIMM, SIM30 |
Contacts | 30 | 30 | 30 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 |
access mode | FAST PAGE | FAST PAGE | FAST PAGE |
Maximum access time | 60 ns | 80 ns | 70 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT |
I/O type | COMMON | COMMON | COMMON |
JESD-30 code | R-XSMA-N30 | R-XSMA-N30 | R-XSMA-N30 |
memory density | 9437184 bit | 9437184 bit | 9437184 bit |
Memory IC Type | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE |
memory width | 9 | 9 | 9 |
Number of functions | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 |
Number of terminals | 30 | 30 | 30 |
word count | 1048576 words | 1048576 words | 1048576 words |
character code | 1000000 | 1000000 | 1000000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C |
organize | 1MX9 | 1MX9 | 1MX9 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | SIMM | SIMM | SIMM |
Encapsulate equivalent code | SIM30 | SIM30 | SIM30 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 512 | 512 | 512 |
Maximum seat height | 20.447 mm | 20.447 mm | 20.447 mm |
Maximum standby current | 0.009 A | 0.009 A | 0.009 A |
Maximum slew rate | 0.81 mA | 0.63 mA | 0.72 mA |
Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO |
technology | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | SINGLE | SINGLE | SINGLE |
Maker | Infineon | - | Infineon |