GKR240/04 thru GKR240/18
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 1800 V V
RRM
• Equivalent to SKR240 Series
• Not ESD Sensitive
DO-9 Package
V
RRM
= 400 V - 1800 V
I
F
= 320 A
2
1
2
1
GKR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GKN has leads reversed)
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
DC
I
F
T
C
≤
100 °C
I
F,SM
T
C
= 25 °C, t
p
= 10 ms
T
j
T
stg
Conditions
GKR240/04 GKR240/08 GKR240/12 GKR240/14 GKR240/16GKR240/18 Unit
400
400
320
6000
-55 to 150
-55 to 150
800
800
320
6000
-55 to 150
-55 to 150
1200
1200
320
6000
-55 to 150
-55 to 150
1400
1400
320
6000
1600
1600
320
6000
1800
1800
320
6000
V
V
A
A
-55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 60 A, T
j
= 25 °C
V
R
= V
RRM
, T
j
= 25 °C
GKR240/04 GKR240/08 GKR240/12 GKR240/14 GKR240/16GKR240/18 Unit
1.4
60
1.4
60
1.4
60
1.4
60
1.4
60
1.4
60
V
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.20
0.20
0.20
0.20
0.20
0.20
K/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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GKR240/04 thru GKR240/18
Fig 1: Forward Characteristics
Fig 2: Forward Current vs Case Temp
Fig 3: Transient Thermal Impedence vs Time
Fig 4: Power Dissipation vs Forward Current
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GKR240/04 thru GKR240/18
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO-9 (DO--205AB)
H
I
F
2
B
D
G
1
C
E
A
Inches
Min
A
B
C
D
E
F
G
H
I
-----
1.24
5.31
0.78
0.470
-----
-----
0.330
1.10
1.25
5.98
0.828
0.530
1.122
0.787
0.350
Max
M 20 * P 1.5
-----
31.5
135
19.60
11.94
-----
-----
8.38
Min
Millimeters
Max
27.94
31.90
152
21.03
13.46
28.5
20.0
8.89
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