UNISONIC TECHNOLOGIES CO., LTD
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage
V
CE(SAT)
=0.5V (Max.)
* High speed switching time: T
STG
=1.0μs (Typ.)
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
SOT-223
-
2SC3669G-x-AA3-R
SOT-89
-
2SC3669G-x-AB3-R
2SC3669L-x-TM3-T
2SC3669G-x-TM3-T
TO-251
2SC3669L-x-TN3-R
2SC3669G-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
SOT-223
SOT-89
TO-251 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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NPN EPITAXIAL SILICON TRANSISTOR
PIN ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
2
A
Base Current
I
B
1
A
SOT-223/SOT-89
0.5
W
Collector Power Dissipation
P
C
TO-251/TO-252
1
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C~85°C.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
t
ON
T
STG
t
f
I
B1
= -I
B2
=0.05A
DUTY CYCLE
≤
1%
TEST CONDITIONS
I
C
= 10mA, I
B
= 0
V
CB
=80V, I
E
= 0
V
EB
= 5V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A
I
C
=1A, I
B
=0.05A
I
C
=1A, I
B
=0.05A
V
CE
=2V, I
C
=0.5A
V
CB
= 10V, I
E
= 0, f=1MHz
MIN
80
TYP MAX UNIT
V
1.0
μA
1.0
μA
240
0.15
0.9
100
30
0.2
1.0
0.2
0.5
1.2
V
V
MHz
pF
μs
μs
μs
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching Time
Storage Time
Fall Time
70
40
CLASSIFICATION OF h
FE1
RANK
RANGE
O
70~140
Y
120~240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS (Cont.)
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Microchip MCU
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