IGBT
LowV
CE(sat)
IGBTinTRENCHSTOP
TM
5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKZ75N65EL5
650VDuoPackIGBTanddiode
LowV
CE(sat)
seriesfifthgeneration
Datasheet
IndustrialPowerControl
IKZ75N65EL5
LowV
CE(sat)
seriesfifthgeneration
LowV
CE(sat)
IGBTinTRENCHSTOP
TM
5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
FeaturesandBenefits:
LowV
CE(sat)
L5technologyoffering
•Verylowcollector-emittersaturationvoltageV
CEsat
•Best-in-Classtradeoffbetweenconductionandswitchinglosses
•650Vbreakdownvoltage
•LowgatechargeQ
G
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating
•RoHScompliant
•CompleteproductspectrumandPSpicemodels:
http://www.infineon.com/igbt/
Applications:
•Uninterruptiblepowersupplies
•Solarphotovoltaicinverters
•Weldingmachines
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
IKZ75N65EL5
V
CE
650V
I
C
75A
V
CEsat
,T
vj
=25°C
1.1V
T
vjmax
175°C
Marking
K75EEL5
Package
PG-TO247-4
2
Rev.2.1,2014-12-10
IKZ75N65EL5
LowV
CE(sat)
seriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.1,2014-12-10
IKZ75N65EL5
LowV
CE(sat)
seriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax1)
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax2)
Turn off safe operating area
V
CE
≤650V,T
vj
≤175°C,t
p
=1µs
2)
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°Cvaluelimitedbybondwire
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax2)
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
3)
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
P
tot
T
vj
T
stg
Value
650
100.0
100.0
300.0
300.0
90.0
89.0
300.0
±20
±30
536.0
268.0
-40...+175
-55...+150
260
Unit
V
A
A
A
A
A
V
W
°C
°C
°C
Nm
M
0.6
Max.Value
Unit
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.28
0.46
40
K/W
K/W
K/W
1)
2)
Both values limited by bondwires.
Defined by design. Not subject to production test.
3)
Package not recommended for surface mount applications.
4
Rev.2.1,2014-12-10
IKZ75N65EL5
LowV
CE(sat)
seriesfifthgeneration
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=75.0A
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
V
GE
=0V,I
F
=75.0A
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
I
C
=1.00mA,V
CE
=V
GE
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=150°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=75.0A
650
-
-
-
-
-
-
4.2
-
-
-
-
-
1.10
1.11
1.12
1.40
1.42
1.40
5.0
-
1.35
-
-
1.70
-
-
5.8
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
-
40.0
1000.0
-
5000.0
-
-
155.0
100
-
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
1)
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=520V,I
C
=75.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
12100
150
42
436.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
Symbol Conditions
Value
min.
-
-
-
-
-
-
-
typ.
120
23
275
50
1.57
3.20
4.77
max.
-
-
-
-
-
-
-
Unit
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=75.0A,
V
GE
=0.0/15.0V,
R
G(on)
=23.0Ω,R
G(off)
=4.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
ns
ns
ns
ns
mJ
mJ
mJ
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the Kelvin emitter pin.
5
Rev.2.1,2014-12-10
Wireless Connectivity
京公网安备 11010802033920号
EEWORLD
