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KM432S2020BT-F8

Description
Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Categorystorage    storage   
File Size331KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KM432S2020BT-F8 Overview

Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

KM432S2020BT-F8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP86,.46,20
Contacts86
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G86
JESD-609 codee0
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals86
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP86,.46,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm

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Description Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20
Contacts 86 86 86 86 86 86 86 86
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 6 ns 8 ns 6 ns 6 ns 8 ns 7 ns 6 ns 7 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 125 MHz 83 MHz 125 MHz 100 MHz 83 MHz 100 MHz 100 MHz 100 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
length 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 86 86 86 86 86 86 86 86
word count 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
Encapsulate equivalent code TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096 4096 4096 4096 4096
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES YES YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.15 mA 0.115 mA 0.15 mA 0.15 mA 0.115 mA 0.13 mA 0.15 mA 0.13 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm

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